SHENZHENFREESCALE SQD30N05-20L

SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
55
RDS(on) () at VGS = 10 V
0.020
RDS(on) () at VGS = 4.5 V
0.026
ID (A)
FEATURES
30
Configuration
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
Single
D
• 100 % Rg and UIS Tested
TO-252
• Material categorization:
For definitions of compliance please see
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G
Drain Connected to Tab
G
D
S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD30N05-20L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
55
V
30
19
IS
30
IDM
120
IAS
20
EAS
20
PD
UNIT
50
16
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
60
RthJC
3
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
VDS
VGS = 0 V, ID = 250 μA
55
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
Zero Gate Voltage Drain Current
IDSS
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductanceb
ID(on)
RDS(on)
gfs
VGS = 0 V
VDS = 55 V
-
-
1
VGS = 0 V
VDS = 55 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 55 V, TJ = 175 °C
-
-
250
VGS = 5 V
VDS5 V
30
-
-
VGS = 10 V
ID = 20 A
-
0.016
0.020
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.035
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.043
VGS = 4.5 V
ID = 15 A
-
0.021
0.026
-
34
-
VDS = 15 V, ID = 20 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source
Gate-Drain
Chargec
Chargec
Gate Resistance
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
-
938
1175
-
203
255
Crss
-
86
110
Qg
-
12
18
-
4.1
-
Qgs
VGS = 0 V
VGS = 5 V
VDS = 25 V, f = 1 MHz
VDS = 25 V, ID = 35 A
Qgd
Rg
td(off)
nC
-
4.8
-
f = 1 MHz
1.40
2.89
4.50
-
7
11
VDD = 25 V, RL = 0.71 
ID  35 A, VGEN = 10 V, Rg = 1 
-
10
15
-
18
27
-
5
8
-
-
120
A
-
1.2
1.5
V
td(on)
tr
pF
tf

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 80 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
40
VGS = 10 V thru 4 V
32
I D - Drain Current (A)
ID - Drain Current (A)
32
24
16
8
24
16
TC = 25 °C
8
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
10
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
50
0.10
0.08
RDS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
TC = - 55 °C
40
TC = 25 °C
30
20
TC = 125 °C
10
0.06
0.04
VGS = 4.5 V
0.02
VGS = 10 V
0
0.00
0
5
10
15
20
0
25
8
ID - Drain Current (A)
Transconductance
24
32
40
On-Resistance vs. Drain Current
100
2.5
ID = 20 A
2.1
10
VGS = 10 V
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
16
ID - Drain Current (A)
1.7
1.3
0.9
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.5
- 50
- 25
0
25
50
75
100
125
150
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
6
1500
ID = 35 A
5
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
1200
Ciss
900
600
Coss
300
Crss
VDS = 25 V
4
3
2
1
0
0
0
5
10
15
20
25
30
35
40
45
50
55
0
3
VDS - Drain-to-Source Voltage (V)
6
9
12
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
0.6
0.20
0.3
VGS(th) Variance (V)
0.16
0.12
0.08
0
2
4
6
8
- 0.3
ID = 5 mA
- 0.6
- 0.9
TJ = 25 °C
0.00
0
ID = 250 µA
TJ = 150 °C
0.04
- 1.2
- 50
10
- 25
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
125
150
175
70
ID = 1 mA
VDS - Drain-to-Source Voltage (V)
R DS(on) - On-Resistance (Ω)
15
67
64
61
58
55
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
ID - Drain Current (A)
ID Limited
100 μs
10
1 ms
10 ms
100 ms
10 s, 1 s, DC
1
Limited by RDS(on)*
0.1
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
C1
e
b1
D1
e1
E1
L
gage plane height (0.5 mm)
L1
b
L3
H
D
L2
b2
C
A2
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.21
2.38
0.087
0.094
A1
0.89
1.14
0.035
0.045
A2
0.030
0.127
0.001
0.005
b
0.71
0.88
0.028
0.035
b1
0.76
1.14
0.030
0.045
b2
5.23
5.44
0.206
0.214
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.10
4.45
0.161
0.175
E
6.48
6.73
0.255
0.265
E1
4.49
5.50
0.177
0.217
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
9.65
10.41
0.380
L
1.40
1.78
0.055
0.070
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
1.15
1.52
0.040
0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Note
• Dimension L3 is for reference only.
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0.410
SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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