SQR50N06-07L Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET 60 RDS(on) () at VGS = 10 V 0.0076 RDS(on) () at VGS = 4.5 V 0.009 ID (A) • Package with Low Thermal Resistance • 100 % Rg and UIS Tested 50 Configuration Single TO-252 Reverse Lead DPAK • AEC-Q101 Qualifiedd D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Reverse Lead DPAK Lead (Pb)-free and Halogen-free SQR50N06-07L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 50 50 IS 50 IDM 200 IAS 48 EAS 115 PD UNIT 136 45 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 50 RthJC 1.1 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1/8 www.freescale.net.cn SQR50N06-07L Automotive N-Channel 60 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VDS VGS = 0 V, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 60 V - - 1.0 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 50 - - VGS = 10 V ID = 20 A - 0.0064 0.0076 Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0130 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0160 VGS = 4.5 V ID = 20 A - 0.0078 0.0090 - 82 - VDS = 15 V, ID = 20 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz - 4455 5570 - 407 510 Reverse Transfer Capacitance Crss - 223 280 Total Gate Chargec Qg - 80 120 Gate-Source Chargec Qgs - 11.1 - Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 10 V VDS = 30 V, ID = 50 A Qgd pF nC - 15.7 - 1 2 3 td(on) - 12 18 tr - 13 20 - 42 63 - 7 11 - - 200 A - 0.85 1.5 V Rg td(off) f = 1 MHz VDD = 30 V, RL = 0.6 ID 50 A, VGEN = 10 V, Rg = 1 tf ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 20 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/8 www.freescale.net.cn SQR50N06-07L Automotive N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 120 120 100 VGS = 10 V thru 4 V ID - Drain Current (A) ID - Drain Current (A) 100 80 60 40 20 80 60 TC = 25 °C 40 20 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0 0 3 6 9 12 0 15 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 150 1.2 TC = - 55 °C 120 gfs - Transconductance (S) ID - Drain Current (A) 1.0 0.8 0.6 TC = 25 °C 0.4 TC = 25 °C 90 TC = 125 °C 60 30 0.2 TC = - 55 °C TC = 125 °C 0 0.0 0 1 2 3 4 0 5 10 VGS - Gate-to-Source Voltage (V) 0.025 40 50 6000 5000 C - Capacitance (pF) 0.020 RDS(on) - On-Resistance (Ω) 30 Transconductance Transfer Characteristics 0.015 VGS = 4.5 V 0.010 0.005 VGS = 10 V 4000 3000 2000 0 0 20 40 60 Ciss 1000 0.000 80 ID - Drain Current (A) On-Resistance vs. Drain Current 3/8 20 ID - Drain Current (A) 100 Coss Crss 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance www.freescale.net.cn 60 SQR50N06-07L Automotive N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.3 ID = 20 A 2.0 ID = 50 A VDS = 30 V 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 6 4 2 1.7 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0 0.5 0 20 40 60 80 100 - 50 - 25 0 Qg - Total Gate Charge (nC) 75 100 125 150 175 TJ - Junction Temperature (°C) 100 0.05 10 0.04 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 50 On-Resistance vs. Junction Temperature Gate Charge TJ = 150 °C 1 0.1 25 TJ = 25 °C 0.01 0.03 0.02 TJ = 150 °C 0.01 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 10 80 VDS - Drain-to-Source Voltage (V) 0.1 VGS(th) Variance (V) 8 On-Resistance vs. Gate-to-Source Voltage 0.5 - 0.3 ID = 5 mA ID = 250 μA - 0.7 - 1.1 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage 4/8 6 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage - 1.5 - 50 - 25 4 125 150 175 76 ID = 10 mA 72 68 64 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.freescale.net.cn SQR50N06-07L Automotive N-Channel 60 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 ID Limited 100 μs 1 ms 10 1 0.1 0.01 0.01 10 ms 100 ms 1 s, 10 s, DC Limited by RDS(on)* BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5/8 www.freescale.net.cn 1000 SQR50N06-07L Automotive N-Channel 60 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6/8 www.freescale.net.cn SQR50N06-07L Automotive N-Channel 60 V (D-S) 175 °C MOSFET TO-252 REVERSE LEAD CASE OUTLINE A E MILLIMETERS C1 H D L2 b2 A1 b gage plane height (0.020) L L1 L3 A2 b1 E1 C DIM. MIN. MAX. MIN. MAX. A 2.23 2.33 0.088 0.092 A1 0.64 0.89 0.025 0.035 A2 0.03 0.23 0.001 0.009 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.49 5.00 0.177 0.197 E 6.48 6.73 0.255 0.265 E1 4.32 - 0.170 - e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 0.410 L 1.40 1.78 0.055 0.070 L1 E1 INCHES 2.74 BSC 0.108 BSC L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T-08706-Rev. B, 29-Sep-08 DWG: 5894 D1 e e1 Note Dimension L3 for reference only. 7/8 www.freescale.net.cn SQR50N06-07L Automotive N-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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