SUD09P10-195 P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 ID (A) 0.195 at VGS = - 10 V - 8.8 0.210 at VGS = - 4.5 V - 8.5 Qg (Typ.) 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Power Switch • DC/DC Converters S TO-252 G Drain Connected to Tab G D S D Top View Ordering Information: SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage Parameter VDS - 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C IDM Pulsed Drain Current Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range ID L = 0.1 mH TC = 25 °C TA = 25 °Cc V - 8.8 - 7.1 - 15 IAS - 18 EAS 16.2 PD Unit 32.1 A mJ b 2.5 W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Symbol Limit Junction-to-Ambient (PCB Mount)c Parameter RthJA 50 Junction-to-Case (Drain) RthJC 3.9 Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). 1/6 www.freescale.net.cn °C/W SUD09P10-195 P-Channel 100 V (D-S) MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 100 VGS(th) VDS = VGS, ID = - 250 µA -1 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage IGSS Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 VDS = 0 V, VGS = ± 20 V ± 250 VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 100 V, VGS = 0 V, TJ = 150 °C - 250 VDS ≤ - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 15 V nA µA A VGS = - 10 V, ID = - 3.6 A 0.162 0.195 VGS = - 4.5 V, ID = - 3.4 A 0.175 0.210 VDS = - 15 V, ID = - 3.6 A 12 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec Rise Timec VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A VDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A Fall Timec td(off) 23.2 34.8 11.7 17.6 3.5 f = 1 MHz VDD = - 50 V, RL = 17.2 Ω ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 1.2 5.7 11.5 7 14 12 18 33 50 9 18 - 8.8 Pulsed Current ISM - 15 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 2.9 A, VGS = 0 V - 0.8 IF = - 2.9 A, dI/dt = 100 A/µs 98 trr IRM(REC) Qrr Ω ns b IS Continuous Current nC 4.8 td(on) tr c pF 65 41 Rg Gate Resistance Turn-Off Delay Time 1055 VGS = 0 V, VDS = - 50 V, f = 1 MHz A - 1.5 V 50 75 ns -4 -6 A 147 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/6 www.freescale.net.cn SUD09P10-195 P-Channel 100 V (D-S) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 0.30 V GS = 10 V thru 5 V V GS = 4 V R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 12 9 6 V GS = 3 V 3 0 0.25 0.20 V GS = 4.5 V V GS = 10 V 0.15 0.10 0 1 2 3 4 0 3 6 V DS - Drain-to-Source Voltage (V) 12 15 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 2.0 0.60 R DS(on) - On-Resistance (Ω) 1.6 I D - Drain Current (A) 9 1.2 0.8 T C = 25 °C 0.4 0.45 T J = 150 °C 0.30 T J = 25 °C 0.15 T C = 125 °C T C = - 55 °C 0.0 0.00 0 1 2 3 4 0 V GS - Gate-to-Source Voltage (V) 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 25 10 VGS - Gate-to-Source Voltage (V) g fs - Transconductance (S) ID = 3.6 A 20 T C = - 55 °C 15 T C = 25 °C 10 T C = 125 °C 5 0 V DS = 50 V 6 V DS = 25 V 4 V DS = 80 V 2 0 0 3 6 9 ID - Drain Current (A) Transconductance 3/6 8 12 15 0 5 10 15 20 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 25 SUD09P10-195 P-Channel 100 V (D-S) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 - 1.1 I S - Source Current (A) - 1.4 T J = 150 °C ID = 250 μA VGS(th) (V) 10 - 1.7 T J = 25 °C 1 - 2.0 0.1 0.0 0.3 0.6 0.9 - 2.3 - 50 1.2 0 25 50 75 V SD - Source-to-Drain Voltage (V) T J - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 100 125 150 100 125 150 - 100 1200 VDS - Drain-to-Source Voltage (V) 1600 C - Capacitance (pF) - 25 Ciss 800 400 - 106 ID = 250 μA - 112 - 118 - 124 Coss Crss 0 0 20 40 60 80 - 130 - 50 100 - 25 0 25 50 75 V DS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 2.1 10 V GS = 10 V ID = 3.6 A V GS = 4.5 V 1.3 0.9 I D - Drain Current (A) (Normalized) R DS(on) - On-Resistance 8 1.7 6 4 2 0.5 - 50 4/6 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 T J - Junction Temperature (°C) T C - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 www.freescale.net.cn 150 SUD09P10-195 P-Channel 100 V (D-S) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 Limited by R DS(on)* I D - Drain Current (A) IDAV (A) 10 TJ = 25 °C TJ = 150 °C 10 100 μs 1 ms 1 10 ms 100 ms 1 s, 10 s, DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 1 10-6 10-5 10-4 10-3 10-2 10-1 Time (s) Single Pulse Avalanche Current Capability vs. Time 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10 -4 0.02 Single Pulse 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5/6 www.freescale.net.cn 10 SUD09P10-195 P-Channel 100 V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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