SHENZHENFREESCALE SUD10P06-280L

SUD10P06-280L
P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) (Ω)
ID (A)
0.170 at VGS = - 10 V
- 10
0.280 at VGS = - 4.5 V
-8
• TrenchFET® Power MOSFETs
• 175 °C Rated Maximum Junction Temperature
RoHS
COMPLIANT
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
D
P-Channel MOSFET
Ordering Information: SUD10P06-280L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 100 °C
Symbol
Limit
Unit
VGS
± 20
V
- 10
ID
-7
IDM
- 20
Continuous Source Current (Diode Conduction)
IS
- 10
Avalanche Current
IAS
- 10
Pulsed Drain Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TA = 25 °C
EAS
5
mJ
37
PD
W
2a
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Symbol
FR4 Board Mount
Free Air
RthJA
RthJC
Typical
Maximum
60
70
120
140
3.7
4.0
Notes:
a. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
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Unit
°C/W
SUD10P06-280L
P-Channel 60 V (D-S) 175 °C MOSFET
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
- 2.0
- 3.0
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
VDS
VDS = 0 V, ID = - 250 µA
- 60
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = - 60 V, VGS = 0 V
-1
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
- 50
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = - 60 V, VGS = 0 V, TJ = 175 °C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 5 A
Drain-Source On-State Resistanceb
Transconductanceb
RDS(on)
0.130
0.31
VGS = - 10 V, ID = - 5 A, TJ = 175 °C
0.375
VGS = - 4.5 V, ID = - 2 A
0.210
VDS = - 15 V, ID = - 5 A
6
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
30
Total Gate Charge
Qg
11.5
Qgs
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
Ω
0.280
S
635
VDS = - 25 V, VGS = 0 V, f = 1 MHz
VDS = - 30 V, VGS = - 10 V, ID = - 10 A
100
pF
25
nC
3.5
2
VDD = - 30 V, RL = 3 Ω
ID ≅ 10 A, VGEN = - 10 V, RG = 2.5 Ω
tf
Source-Drain Diode Ratings and Characteristics TC = 25
9
20
16
20
17
30
19
35
ns
°Ca
Pulsed Current
ISM
Forward Voltageb
VSD
IF = 10 A, VGS = 0 V
trr
IF = 10 A, dI/dt = 100 A/µs
Reverse Recovery Time
0.170
VGS = - 10 V, ID = - 5 A, TJ = 125 °C
Input Capacitance
Qgd
µA
A
gfs
Gate-Source Charge
nA
- 150
- 10
Forward
Dynamic
Gate-Drain Charge
V
- 20
50
A
- 1.3
V
80
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD10P06-280L
P-Channel 60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
30
VGS = 10 thru 7 V
8
I D - Drain Current (A)
I D - Drain Current (A)
24
6V
18
12
5V
6
4V
6
4
TC = 125 °C
2
25 °C
- 55 °C
3V
0
0
0
2
4
6
8
0
10
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
TC = - 55 °C
12
25 °C
R DS(on) - On-Resistance (Ω)
15
9
125 °C
6
0.9
0.6
VGS = 4.5 V
0.3
VGS = 10 V
3
0.0
0
0
4
8
12
16
0
20
2
4
6
8
10
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
VGS - Gate-to-Source Voltage (V)
1000
800
C - Capacitance (pF)
5
1.2
18
g fs - Transconductance (S)
1
Ciss
600
400
200
Coss
VDS = 20 V
ID = 10 A
16
12
8
4
Crss
0
0
0
3/7
10
20
30
40
50
60
0
4
8
12
16
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
20
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SUD10P06-280L
P-Channel 60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
2.5
VGS = 10 V
ID = 5 A
I S - Source Current (A)
RDS(on) - On-Resistance
(Normalized)
2.0
1.5
1.0
TJ = 150 °C
10
TJ = 25 °C
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
1
0.3
175
0.6
0.9
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.5
THERMAL RATINGS
12
30
10 µs
100 µs
Limited by RDS(on)*
10
I D - Drain Current (A)
I D - Drain Current (A)
9
6
3
1 ms
1
10 ms
100 ms
DC, 1 s
TC = 25 °C
Single Pulse
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Drain Current vs. Case Temperature
175
0.1
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
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3
SUD10P06-280L
P-Channel 60 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
C1
e
b1
D1
e1
E1
L
gage plane height (0.5 mm)
L1
b
L3
H
D
L2
b2
C
A2
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.21
2.38
0.087
0.094
A1
0.89
1.14
0.035
0.045
A2
0.030
0.127
0.001
0.005
b
0.71
0.88
0.028
0.035
b1
0.76
1.14
0.030
0.045
b2
5.23
5.44
0.206
0.214
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.10
4.45
0.161
0.175
E
6.48
6.73
0.255
0.265
E1
4.49
5.50
0.177
0.217
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
9.65
10.41
0.380
L
1.40
1.78
0.055
0.070
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
1.15
1.52
0.040
0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Note
• Dimension L3 is for reference only.
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0.410
SUD10P06-280L
P-Channel 60 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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SUD10P06-280L
P-Channel 60 V (D-S) 175 °C MOSFET
Disclaimer
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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