SUD17N25-165 N-Channel 250 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 250 0.165 at VGS = 10 V 17 • TrenchFET® Power MOSFET • 175 °C Junction Temperature RoHS COMPLIANT D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information: SUD17N25-165-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C 9.8 20 Continuous Source Current (Diode Conduction) IS 17 Single Pulse Avalanche Current IAS 5 Single Pulse Avalanche Energy EAS Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C A 1.25 mJ 136b PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range V 17 ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. 1/5 www.freescale.net.cn Unit °C/W SUD17N25-165 N-Channel 250 V (D-S) 175 °C MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typa Test Conditions Min Max V(BR)DSS VGS = 0 V, ID = 250 µA 250 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 250 V, VGS = 0 V 1 VDS = 250 V, VGS = 0 V, TJ = 125 °C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS 4.0 VDS = 250 V, VGS = 0 V, TJ = 175 °C b On-State Drain Current VDS = 15 V, VGS = 10 V Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 14 A, TJ = 125 °C 0.347 VGS = 10 V, ID = 14 A, TJ = 175 °C 0.462 Forward Transconductanceb gfs VDS = 15 V, ID = 17 A nA µA 250 ID(on) VGS = 10 V, ID = 14 A V 17 A 0.131 0.165 36 Ω S a Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c 1950 VGS = 0 V, VDS = 25 V, f = 1 MHz 160 pF 70 30 Gate-Source Charge Gate-Drain Chargec Qgd 10 Gate Resistance Rg 1.6 td(on) 15 25 130 195 30 45 100 150 Turn-On Delay Timec Rise Timec VDS = 125 V, VGS = 10 V, ID = 17 A 42 Qgs tr Turn-Off Delay Timec td(off) Fall Timec VDD = 125 V, RL = 7.35 Ω ID ≅ 17 A, VGEN = 10 V, Rg = 2.5 Ω tf nC 10 Ω ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Diode Forward Voltage 20 A VSD IF = 17 A, VGS = 0 V 0.9 1.5 V trr IF = 17 A, di/dt = 100 A/µs 115 175 ns ISM Pulsed Current b Source-Drain Reverse Recovery Time Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/5 www.freescale.net.cn SUD17N25-165 N-Channel 250 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C unless noted 20 20 VGS = 10 thru 6 V 16 16 I D - Drain Current (A) I D - Drain Current (A) 5V 12 8 4 12 8 TC = 125 °C 4 25 °C - 55 °C 4V 0 0 0 4 8 12 16 0 20 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 60 6 0.32 TC = - 55 °C 0.28 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 50 25 °C 40 125 °C 30 20 10 0 0.24 0.20 0.16 VGS = 10 V 0.12 0.08 0.04 0.00 0 4 8 12 16 20 0 4 8 ID - Drain Current (A) 20 On-Resistance vs. Drain Current 20 2100 V GS - Gate-to-Source Voltage (V) 2800 C - Capacitance (pF) 16 ID - Drain Current (A) Transconductance Ciss 1400 700 Crss Coss VDS = 125 V ID = 17 A 16 12 8 4 0 0 0 3/5 12 40 80 120 160 200 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge www.freescale.net.cn 48 56 SUD17N25-165 N-Channel 250 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS 25 °C unless noted 2.8 100 VGS = 10 V ID = 17 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 2.4 2.0 1.6 1.2 TJ = 150 °C 10 TJ = 25 °C 0.8 0.4 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 1 175 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) 0 On-Resistance vs. Junction Temperature 1.2 Source-Drain Diode Forward Voltage THERMAL RATINGS 20 100 Limited by rDS(on) 10 µs I D - Drain Current (A) I D - Drain Current (A) 16 12 8 10 100 µs 1 ms 1 TC = 25 °C Single Pulse 4 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 175 0.1 0.1 Maximum Avalanche Drain Current vs. Case Temperature 10 ms 100 ms, dc 1 10 100 VDS - Drain-to-Source Voltage (V) 1000 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 Normalized Thermal Transient Impedance, Junction-to-Case 4/5 www.freescale.net.cn 1 SUD17N25-165 N-Channel 250 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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