SUD40N02-08 N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) () ID (A)a 0.0085 @ VGS = 4.5 V 40 0.014 @ VGS = 2.5 V 40 VDS (V) 20 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD40N02-08 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 TC = 25_C Continuous Drain Currenta TC = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V 40 ID 40 IDM 100 IS 40 A 71 PD W 8.3b, c TJ, Tstg - 55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec. Maximum Junction-to-Ambientb Maximum Junction-to-Case Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.75 2.1 Notes a. Package Limited b. Surface Mounted on 1” x 1” FR4 Board c. t v 10 sec 1/5 www.freescale.net.cn Unit _C/W SUD40N02-08 N-Channel 20 V (D-S) 175 °C MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 A 20 VGS(th) VDS = VGS, ID = 250 A 0.6 IGSS VDS = 0 V, VGS = "12 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs VDS = 5 V, VGS = 4.5 V V 40 A A VGS = 4.5 V, ID = 20 A 0.0068 0.0085 VGS = 4.5 V, ID = 20 A, TJ = 125_C 0.0104 0.013 VGS = 2.5 V, ID = 20 A 0.011 0.014 VDS = 5 V, ID = 40 A nA 20 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 375 Total Gate Chargec Qg 26 Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec VGS = 0 V, VDS = 20 V, f = 1 MHz 730 35 nC 7 Rg 1 td(on) td(off) pF 5 VDS = 10 V,, VGS = 4.5 V,, ID = 40 A Qgd tr Timec 2660 VDD = 10 V, RL = 0.25 ID ^ 40 A, VGEN = 4.5 V, RG = 2.5 tf 3.7 20 35 120 190 45 70 20 35 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 100 A Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 A/s 35 70 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 s, duty cycle v 2%. c. Independent of operating temperature. 2/5 www.freescale.net.cn SUD40N02-08 N-Channel 20 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 4.5 thru 3 V 80 60 I D - Drain Current (A) I D - Drain Current (A) 80 2.5 V 40 2V 20 60 40 TC = 125_C 20 25_C 1, 0.5 V 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 - 55_C 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 120 0.020 TC = - 55_C r DS(on) - On-Resistance ( ) g fs - Transconductance (S) 100 25_C 80 125_C 60 40 20 0 0.015 VGS = 2.5 V 0.010 VGS = 4.5 V 0.005 0.000 0 20 40 60 80 0 100 20 40 VGS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) Ciss 2700 1800 Coss Crss 100 Gate Charge 12 3600 900 80 ID - Drain Current (A) Capacitance 4500 60 0 VGS = 10 V ID = 40 A 9 6 3 0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) 3/5 20 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) www.freescale.net.cn 70 SUD40N02-08 N-Channel 20 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 4.5 V ID = 20 A 1.6 I S - Source Current (A) r DS(on) - On-Resistance () (Normalized) 2.0 1.2 0.8 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ = 150_C TJ = 25_C 10 1 175 0 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 200 50 100 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 s Limited by rDS(on) 100 s 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 10 0 1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 4/5 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 www.freescale.net.cn SUD40N02-08 N-Channel 20 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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