SUD40N08-16 N-Channel 80 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 80 0.016 @ VGS = 10 V 40 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 Drain Connected to Tab G D G S Top View Ordering Information: S SUD40N08-16 SUD40N08-16—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 80 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)b TC = 25_C TC = 125_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V 40 ID 30 IDM 60 IS 40 IAR 40 EAR 80 A mJ 136b PD W 3a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter J Junction-to-Ambient ti t A bi ta Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. 1/5 www.freescale.net.cn SUD40N08-16 N-Channel 80 V (D-S) 175 °C MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 80 VGS(th) VDS = VGS, ID = 250 mA 2.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 125_C 50 VDS = 80 V, VGS = 0 V, TJ = 175_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V 60 rDS(on) VGS = 10 V, ID = 40 A, TJ = 125_C 0.027 VGS = 10 V, ID = 40 A, TJ = 175_C 0.037 VGS = 10 V, ID = 40 A Drain-Source On-State Resistanceb Forward Transconductanceb 4.0 gfs nA mA m A 0.013 VDS = 15 V, ID = 40 A V 0.016 45 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Fall Timec 370 42 60 7 VDS = 40 V,, VGS = 10 V,, ID = 40 A nC 13 Rg 0.5 td(on) td(off) pF 200 Qgd tr Turn-Off Delay Timec 1960 VGS = 0 V, VDS = 25 V, F = 1 MHz VDD = 40 V, RL = 1.0 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W tf 2.7 12 20 52 80 25 38 10 15 W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 60 A Voltageb VSD IF = 40 A, VGS = 0 V 1.0 1.5 V Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 A/ms 45 70 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2/5 www.freescale.net.cn SUD40N08-16 N-Channel 80 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 7 V 80 60 I D − Drain Current (A) I D − Drain Current (A) 80 6V 40 20 5V 3, 4 V 60 40 TC = 125_C 20 25_C −55_C 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.04 25_C 60 r DS(on)− On-Resistance ( W ) g fs − Transconductance (S) TC = −55_C 125_C 40 20 0 0.03 0.02 VGS = 10 V 0.01 0.00 0 20 40 60 80 100 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 1500 1000 Crss 500 100 60 75 Gate Charge 20 2500 2000 80 ID − Drain Current (A) Capacitance 3000 60 Coss 0 VDS = 10 V ID = 40 A 16 12 8 4 0 0 20 40 60 VDS − Drain-to-Source Voltage (V) 3/5 80 0 15 30 45 Qg − Total Gate Charge (nC) www.freescale.net.cn SUD40N08-16 N-Channel 80 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.4 100 VGS = 10 V ID = 40 A 10 I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 2.0 1.6 1.2 0.8 TJ = 150_C 1 TJ = 25_C 0.1 0.4 0.0 −50 −25 0 25 50 75 100 125 150 0.01 175 0 TJ − Junction Temperature (_C) 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 50 40 100 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 30 20 10 0 0 25 50 75 100 125 150 100 ms 10 1 ms 10 ms 1 0.1 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 100 ms 1 s, dc TC = 25_C Single Pulse TC − Case Temperature (_C) 1 10 ms Limited by rDS(on) Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) 4/5 www.freescale.net.cn 30 SUD40N08-16 N-Channel 80 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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