SUD50N02-06P N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 a RDS(on) (Ω) ID (A) 0.0060 at VGS = 10 V 26 0.0095 at VGS = 4.5 V 21 • • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized for High Efficiency 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Buck DC/DC Conversion - Desktop - Server TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N02-06P-E3 (Lead (Pb) free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Currenta TC = 25 °C 50b 100 Continuous Source Current (Diode Conduction) IS 26 Avalanche Current IAS 45 EAS 101 a Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TA = 25 °C TC = 25 °C 6.8 PD A mJ a W 65 TJ, Tstg Operating Junction and Storage Temperature Range V 26a ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t ≤ 10 s Steady State RthJA RthJC Typical Maximum 18 22 40 50 1.9 2.3 Notes: a. Surface mounted on FR4 board, t ≤ 10 s. b. Limited by package. 1/7 www.freescale.net.cn Unit °C/W SUD50N02-06P N-Channel 20 V (D-S) 175 °C MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage VDS VGS(th) IGSS 20 0.8 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125 °C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 °C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A Drain-Source On-State Resistanceb rDS(on) Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf Typ.a Max. Unit V 3 ± 100 1 50 nA µA 50 A 0.0046 0.0073 0.006 0.0084 0.0095 Ω 15 S VGS = 0 V, VDS = 10 V, f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 50 A 0.5 Turn-On Delay Timec VDD = 10 V, RL = 0.2 Ω Rise Timec c ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω I Turn-Off Delay Time D c Fall Time Source-Drain Diode Ratings and Characteristic (TC = 25 °C) ISM Pulsed Current b V IF = 50 A, VGS = 0 V Diode Forward Voltage SD trr IF = 50 A, dI/dt = 100 A/µs Source-Drain Reverse Recovery Time 2550 900 415 19 7.5 6 1.5 11 10 24 9 2.4 20 15 35 15 1.2 35 100 1.5 70 pF 30 nC Ω ns A V ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C unless noted) 100 160 140 VGS = 10 thru 5 V 80 I D - Drain Current (A) I D - Drain Current (A) 120 4V 100 80 60 60 40 TC = 125 °C 3V 40 20 25 °C 20 2V - 55 °C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics 2/7 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) 4.0 4.5 Transfer Characteristics www.freescale.net.cn SUD50N02-06P N-Channel 20 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25 °C unless noted) 100 0.010 0.008 25 °C VGS = 4.5 V 125 °C 60 0.006 40 VGS = 6.3 V 0.004 R DS(on) gfs - Transconductance (S) TC = - 55 °C 80 20 0 VGS = 10 V 0.002 0.000 0 10 20 30 40 50 0 20 40 ID - Drain Current (A) Transconductance 80 100 On-Resistance vs. Drain Current 3500 10 VGS - Gate-to-Source Voltage (V ) 3000 Ciss 2500 C - Capacitance (pF) 60 ID - Drain Current (A) 2000 1500 Coss 1000 Crss VDS = 10 V ID = 50 A 8 6 4 2 500 0 0 0 4 8 12 16 0 20 16 24 32 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 1.6 40 100 VGS = 10 V ID = 30 A 1.4 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 8 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3/7 175 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.freescale.net.cn 1.5 SUD50N02-06P N-Channel 20 V (D-S) 175 °C MOSFET THERMAL RATINGS 1000 40 Limited by RDS(on)* 100 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 8 10, 100 µs 1 ms 10 10 ms 100 ms 1 TA = 25 °C Single Pulse 0.1 0 0 25 50 75 100 125 150 175 0.01 0.1 TA - Ambient Temperature (°C) 1s 10 s 100 s, DC 1 10 100 VDS - Drain-to-Source Voltage (V) > * VGS minimum V GS at which RDS(on) is specified Maximum Drain Current vs. Ambient Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 4/7 www.freescale.net.cn SUD50N02-06P N-Channel 20 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 5/7 www.freescale.net.cn 0.410 SUD50N02-06P N-Channel 20 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 6/7 Return to Index www.freescale.net.cn SUD50N02-06P N-Channel 20 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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