SUD50N04-07 N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0074 at VGS = 10 V 65 0.011 at VGS = 4.5 V 54 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Threshold RoHS COMPLIANT APPLICATIONS • Motor Control • Automotive - 12 V Boardnet D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET Ordering Information: SUD50N04-07-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya a Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS TC = 25 °C TC = 100 °C L = 0.1 mH TC = 25 °C Limit 40 ± 20 65c 46c 100 40 80 65 - 55 to 175 ID IDM IAR EAR PD TJ, Tstg Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t ≤ 10 sec Steady State RthJA RthJC Typical 18 40 1.9 Maximum 22 50 2.3 Notes: a. Duty cycle ≤ 1 %. b. Surface mounted on 1" FR4 board. c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A. 1/6 www.freescale.net.cn Unit °C/W SUD50N04-07 N-Channel 40 V (D-S) 175 °C MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 32 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 32 V, VGS = 0 V, TJ = 125 °C 50 VDS = 32 V, VGS = 0 V, TJ = 175 °C 150 VDS = 5 V, VGS = 10 V 65 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea rDS(on) 0.012 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.015 VDS = 15 V, ID = 15 A 0.0085 20 nA µA 0.0074 VGS = 10 V, ID = 20 A, TJ = 125 °C gfs V A 0.006 VGS = 4.5 V, ID = 10 A Forward Transconductancea 3 Ω 0.011 57 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 320 pF 190 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 10 Rg 2.0 td(on) 11 20 20 30 40 60 15 25 Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off DelayTimec Fall Timec tr td(off) 50 VDS = 20 V, VGS = 10 V, ID = 50 A VDD = 20 V, RL = 0.4 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω tf 75 10 nC Ω ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b Continous Current IS 43 Pulsed Current ISM 100 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.90 1.50 V trr IF = 30 A, di/dt = 100 A/µs 30 45 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/6 www.freescale.net.cn SUD50N04-07 N-Channel 40 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless noted 100 100 VGS = 10 thru 5 V 80 80 I D - Drain Current (A) I D - Drain Current (A) 4V 60 40 20 60 40 TC = 125 °C 20 25 °C 3V - 55 °C 0 0 2 4 6 8 0 0.0 10 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 150 0.016 TC = - 55 °C g fs - Transconductance (S) r DS(on) - On-Resistance (Ω) 25 °C 120 125 °C 90 60 30 0 0.012 VGS = 4.5 V 0.008 VGS = 10 V 0.004 0.000 0 10 20 30 40 50 60 0 20 40 VGS - Gate-to-Source Voltage (V) 80 100 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 4000 V GS - Gate-to-Source Voltage (V) 10 Ciss 3200 C - Capacitance (pF) 60 2400 1600 800 Coss VDS = 20 V ID = 50 A 8 6 4 2 Crss 0 0 0 8 16 24 32 VDS - Drain-to-Source Voltage (V) Capacitance 3/6 40 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 50 SUD50N04-07 N-Channel 40 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless noted 2.0 100 VGS = 10 V ID = 20 A I S - Source Current (A) r DS(on) - On-Resistance (Normalized) 1.7 1.4 1.1 TJ = 150 °C TJ = 25 °C 10 0.8 0.5 - 50 1 - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS 200 80 Limited by rDS(on) 100 70 10 µs 100 µs I D - Drain Current (A) I D - Drain Current (A) 60 50 40 Limited By Package 30 20 10 1 ms 10 ms 100 ms dc 1 TC = 25 °C Single Pulse 10 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 50 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 www.freescale.net.cn 1K SUD50N04-07 N-Channel 40 V (D-S) 175 °C MOSFET THERMAL RATINGS 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 5/6 www.freescale.net.cn 1 00 SUD50N04-07 N-Channel 40 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on freestyle’s knowledge of typical requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay Material Category Policy freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwis e specified as non-compliant. Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002 /95/EC conform to Directive 2011/65/EU. Document Number: 91000 Revision: 6 / 618-Jul-08 www.vishay.com 1 www.freescale.net.cn