SUD50N06-09L N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0093 @ VGS = 10 V 50 APPLICATIONS 0.0122 @ VGS = 4.5 V 50 VDS (V) rDS(on) (W) 60 ID D Automotive - ABS - Motor Drives - Fuel Injection D TO-252 G Drain Connected to Tab G D S Top View S Order Number: SUD50N06-09L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) _ b TC = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Symbol Limit Unit VGS "20 V 50 ID 50a IDM 100 IS 50a IAR 50 EAR 125 A mJ 100 PD W 3b, 8.3b, c TJ, Tstg _C -55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t p 10 sec. Maximum Junction-to-Ambient Maximum Junction-to-Case Steady State RthJA RthJC Typical Limit 15 18 40 50 1.2 1.5 Notes: a. Package limited. b. Surface mounted on 1” x 1” FR4 Board, t v 10 sec. c. t p 10 sec. 1/5 www.freescale.net.cn Unit _C/W C/W SUD50N06-09L N-Channel 60 V (D-S) 175 °C MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Max 2.0 3.0 Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C 50 On-State Drain Currentb ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V "100 VDS = 48 V, VGS = 0 V, TJ = 175_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs nA mA m 250 50 A 0.0074 0.0093 VGS = 10 V, ID = 20 A, TJ = 125_C 0.016 VGS = 10 V, ID = 20 A, TJ = 175_C 0.020 VGS = 4.5 V, ID = 15 A 0.0122 VDS = 15 V, ID = 20 A W S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 225 Total Gate Chargec Qg 47 Gate-Source Chargec Qgs 10 Gate-Drain Chargec Qgd 12 Turn-On Delay Timec td(on) 10 20 tr 15 25 35 50 20 30 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 2650 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 50 A VDD = 30 V, RL = 0.6 W ID^ 50 A, VGEN = 10 V, RG = 2.5 W tf 470 pF 70 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C) 100 Pulsed Current ISM Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1.0 1.5 V trr IF = 20 A, di/dt = 100 A/ms 45 100 ns Reverse Recovery Time Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2/5 www.freescale.net.cn A SUD50N06-09L N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 5 V 80 4V I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 60 40 TC = 125_C 20 25_C 2 V, 3 V -55 _C 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.015 120 TC = -55_C 0.012 r DS(on) - On-Resistance ( Ω ) g fs - Transconductance (S) 100 25_C 80 125_C 60 40 20 0 VGS = 4.5 V 0.009 VGS = 10 V 0.006 0.003 0.000 0 10 20 30 40 0 50 20 40 ID - Drain Current (A) 80 100 40 50 ID - Drain Current (A) Capacitance Gate Charge 10 4000 3000 V GS - Gate-to-Source Voltage (V) 3500 C - Capacitance (pF) 60 Ciss 2500 2000 1500 1000 Coss 500 Crss 0 0 6 4 2 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 3/5 VDS = 30 V ID = 50 A 8 60 0 10 20 30 Qg - Total Gate Charge (nC) www.freescale.net.cn SUD50N06-09L N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150_C I S - Source Current (A) r DS(on) - On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 20 A 1.5 1.0 TJ = 25_C 10 0.5 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 1000 60 Limited by rDS(on) 50 10 ms I D - Drain Current (A) I D - Drain Current (A) 100 40 30 20 100 ms 10 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0.1 10 0 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TA - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) 4/5 www.freescale.net.cn 100 SUD50N06-09L N-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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