TK12P60W Silicon N Channel MOS Type (DTMOSⅣ) Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V Drain current (Continuous) (Note 1) ID 11.5 A Drain current (Pulsed) (Note 1) IDP 46.0 A Drain power dissipation (Tc = 25°C) PD 100 W Single pulse avalanche energy (Note 2) EAS 93 mJ Avalanche current IAR 5.8 A Drain reverse current (Continuous) (Note 1) IDR 11.5 A Drain reverse current (Pulsed) IDRP 46.0 A Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C (Note 1) 1.08±0.2 10.0 1.14MAX +0.25 −0.12 Symbol 2.29 0.76 ± 0.12 2 1 1.52 Characteristics 2.3 ± 0.1 Absolute Maximum Ratings (Ta = 25°C) 0.58MAX 6.1 ± 0.12 +0.4 −0.6 6.6 ± 0.2 5.34 ± 0.13 0.07 ± 0.07 • • Low drain-source ON-resistance : RDS (ON) = 0.256Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 1.01MAX • Unit: mm 3 1. 2. GATE DRAIN （HEAT SINK） 3. SOURCE JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7K1A Weight : 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Internal Connection Thermal Characteristics Characteristics Symbol Max Unit Rth (ch-c) 1.25 °C/W 2 Thermal resistance, channel to case Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.83 mH, RG = 25 Ω, IAR = 5.8 A This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1/5 www.freescale.net.cn Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 µA Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 µA ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V VDS = 10 V, ID = 0.6 mA 2.7 ⎯ 3.7 V VGS = 10 V, ID = 5.8 A ⎯ 0.265 0.30 Ω ⎯ 890 ⎯ ⎯ 2.8 ⎯ ⎯ 23 ⎯ VDS = 0 to 400 V, VGS = 0 V ⎯ 41 ⎯ pF VDS = OPEN, f = 1MHz ⎯ 6.9 ⎯ Ω ⎯ 23 ⎯ ⎯ 45 ⎯ Drain-source breakdown voltage V (BR) DSS Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Effective output capacitance Co(er) Gate resistance VDS = 300 V, VGS = 0 V, f = 1 MHz Rg Rise time Turn-on time ton ns tf Turn-off time VDD ≈ 400 V toff Total gate charge VOUT RL= 69 Ω 10 Ω Switching time Fall time ID = 5.8 A 10 V VGS 0V tr Duty ≤ 1%, tw = 10 µs Qg Gate-source charge1 Qgs1 Gate-drain charge Qgd MOSFET turn-off dv/dt capability dv/dt pF VDD ≈ 400 V, VGS = 10 V, ID = 11.5 A VDD = 0 to 400 V, ID = 5.8 A ⎯ 6 ⎯ ⎯ 85 ⎯ ⎯ 25 ⎯ ⎯ 5.5 ⎯ ⎯ 11 ⎯ 50 ⎯ ⎯ V/ns Min Typ. Max Unit ⎯ ⎯ −1.7 V ⎯ 380 ⎯ ns ⎯ 3.8 ⎯ µC ⎯ 25 ⎯ A 15 ⎯ ⎯ V/ns nC Source-Drain Characteristics (Ta = 25°C) Characteristics Symbol Forward voltage (diode) VDSF Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery peak current Irr Reverse Diode dv/dt capability dv/dt Test Condition IDR = 11.5 A, VGS = 0 V IDR = 11.5 A, VGS = 0 V, -dIDR/dt = 100 A/µs IDR = 11.5 A, VGS = 0 V, VDD = 400 V Marking TK12P60W Part No. (or abbreviation code) Lot No. 2/5 www.freescale.net.cn ID – VDS ID – VDS 20 10 Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test 7 6.5 8 7.5 (A) 8 6 ID 9 6 Drain current Drain current ID (A) 10 4 5.5 2 10 8 9 7.5 16 7 12 6.5 8 6 4 VGS = 5 V 5.5 VGS = 5 V 0 0 0 1 2 3 Drain-source voltage 4 VDS 5 0 4 2 (V) ID – VGS Common source Ta = 25°C Pulse test (V) VDS 12 Drain-source voltage (A) ID Drain current Common source VDS = 10 V Ta = 25°C 16 Pulse test 8 6 4 ID = 11.5 A 2 5.8 2.9 0 0 2 4 6 Gate-source voltage 8 VGS 0 10 4 (V) 8 16 VGS 20 (V) RDS(ON) – ID VDSS – Ta 10 Drain-source on-resistance RDS(ON) (Ω) Common source VGS = 0 V I = 10 mA 660 D Pulse test 620 580 540 500 −100 12 Gate-source voltage 700 (V) (V) VDS – VGS 0 VDSS VDS 10 8 4 Drain-source voltage 8 Drain-source voltage 20 −50 0 50 Ambient temperature 3/5 6 100 Ta 150 (°C) 200 1 0.1 Common source VGS = 10 V Ta = 25°C Pulse test 0.01 0.1 1 Drain current 10 ID 100 (A) www.freescale.net.cn RDS(ON) – Ta IDR – VDS 100 Common source VGS = 0 V Ta = 25°C Pulse test (A) Common source VGS = 10 V Pulse test IDR Drain-source on-resistance RDS(ON) (Ω) 0.8 0.6 10 Reverse drain current 11.5 5.8 0.4 ID = 2.9 A 0.2 0 −80 1 0.1 −40 0 40 Ambient temperature 80 120 Ta −0.8 −0.4 0 160 (°C) Drain-source voltage C – VDS 100 Coss Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss 10 2 1 0 100 VDS 3 1000 0 100 (V) 200 300 Drain-source voltage 400 VDS 500 (V) Dynamic input/output characteristics Vth – Ta 5 (V) 500 4 Common source ID = 11.5 A Ta = 25°C Pulse test VDS 16 Drain-source voltage 3 2 Common source 1 VDS = 10 V ID = 0.6 mA Pulse test 0 −80 −40 VGS VDS 400 20 (V) Drain-source voltage Vth (V) (V) 300 12 VDD ≈ 400 V VGS 200 8 100 4 0 0 0 40 Ambient temperature 80 Ta 120 (°C) 160 Gate-source voltage 1 Output capacitance stored energy Eoss (µJ) (pF) C Capacitance Ciss 1000 1 0.1 Gate threshold voltage VDS −2 4 10000 4/5 −1.6 Eoss – VDS 100000 10 −1.2 0 5 10 15 Total gate charge 20 Qg 25 30 (nC) www.freescale.net.cn rth – tw Normalized transient thermal impedance rth/Rth(ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 0.05 t Single pulse 0.02 T 0.01 0.01 10 µ Duty = t/T Rth(ch-c) = 1.25°C/W 100 µ 1m 10 m Pulse width 100 m tw 1 (s) PD – Tc EAS – Tch 100 (mJ) 80 EAS Avalanche energy (W) 100 PD 120 Power dissipation 10 60 40 20 80 60 40 20 0 0 0 40 80 Case temperature 120 Tc 160 (°C) 25 50 75 100 125 Channel temperature (initial) 150 Tch (°C) Safe operating area 100 ID max (pulse) * 100 ns * 1 ms * 15 V ID (A) 100 µs * Drain current IAR −15 V ID max (continuous) 10 VDD 1 µs * 10 µs * 1 This area is limited by RDS(ON) VDS Waveform DC operation Tc = 25°C BVDSS 1 2 ・L・I AR・ RG = 25 Ω, VDD = 90 V EAS = BVDSS − VDD 2 0.1 0.01 0.001 0.1 * : Single pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 10 Drain-source voltage 5/5 BVDSS VDSS max 100 VDS 1000 (V) www.freescale.net.cn