TK4P60D MOSFETs Silicon N-Channel MOS (π-MOS) 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.4 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 2.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) DPAK unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Characteristics A Drain current (DC) (Note 1) ID 4 Drain current (pulsed) (Note 1) IDP 16 PD 100 W EAS 158 mJ A Power dissipation (Tc = 25) Single-pulse avalanche energy (Note 2) Avalanche current (Note 3) IAR 4 Reverse drain current (DC) (Note 1) IDR 4 Reverse drain current (pulsed) (Note 1) IDRP 16 Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: 1/8 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. www.freescale.net.cn 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 1.25 /W Channel-to-ambient thermal resistance Rth(ch-a) 125 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 17.3 mH, RG = 25 Ω, IAR = 4 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature Note: 2/8 This transistor is sensitive to electrostatic discharge and should be handled with care. www.freescale.net.cn 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol Test Condition IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = 600 V, VGS = 0 V V(BR)DSS Vth Min Typ. Max Unit ±1 µA 10 ID = 10 mA, VGS = 0 V 600 V VDS = 10 V, ID = 1 mA 2.4 4.4 Drain-source on-resistance RDS(ON) VGS = 10 V, ID = 2 A 1.4 1.7 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 2 A 0.7 2.5 S Min Typ. Max Unit 600 pF 4 70 18 unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Test Condition VDS = 25 V, VGS = 0 V, f = 1 MHz Switching time (rise time) tr Switching time (turn-on time) ton 40 tf 8 toff 55 Min Typ. Max Unit 12 nC Switching time (fall time) Switching time (turn-off time) See Figure 6.2.1. ns Fig. 6.2.1 Switching Time Test Circuit unless otherwise specified) 6.3. Gate Charge Characteristics (Ta = 25 25 Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Test Condition VDD ≈ 400 V, VGS = 10 V, ID = 4 A Gate-source charge Qgs 7 Gate-drain charge Qgd 5 Min Typ. Max Unit unless otherwise specified) 25 6.4. Source-Drain Characteristics (Ta = 25 Characteristics Symbol Test Condition Diode forward voltage VDSF IDR = 4 A, VGS = 0 V -1.7 V Reverse recovery time trr 1200 ns Reverse recovery charge Qrr IDR = 4 A, VGS = 0 V -dIDR/dt = 100 A/µs 7 µC 3/8 www.freescale.net.cn 7. Marking Fig. 7.1 Marking 4/8 www.freescale.net.cn 8. Characteristics Curves (Note) 5/8 Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 |Yfs| - ID Fig. 8.6 RDS(ON) - ID www.freescale.net.cn 6/8 Fig. 8.7 RDS(ON) - Ta Fig. 8.8 IDR - VDS Fig. 8.9 C - VDS Fig. 8.10 Vth - Ta Fig. 8.11 PD - Tc (Guaranteed Maximum) Fig. 8.12 Dynamic Input/Output Characteristics www.freescale.net.cn Fig. 8.13 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.14 Safe Operating Area (Guaranteed Maximum) Fig. 8.15 EAS - Tch (Guaranteed Maximum) Fig. 8.16 Test Circuit/Waveform 7/8 www.freescale.net.cn Package Dimensions Unit: mm Weight: 0.36 g (typ.) 8/8 www.freescale.net.cn