SDR526 thru SDR529 SDR526SMS thru SDR529SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 3 AMPS 600 – 900 VOLTS 35 nsec HYPER FAST RECTIFIER Designer’s Data Sheet Part Number/Ordering Information 1/ SDR52 ___ │ │ │ │ │ │ │ │ │ └ ___ ___ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level Package Type ___ = Axial SMS = Surface Mount Square Tab Voltage/Family 6 = 600V 7 = 700V 8 = 800V 9 = 900V │ │ │ │ │ └ └ FEATURES: • • • • • • • • Hyper Fast Recovery: 35 nsec maximum PIV up to 900 Volts Avalanche Breakdown Hermetically Sealed For High Efficiency High Voltage Applications Single Chip Construction Metallurgically Bonded TX, TXV, and Space Level Screening Available2/ MAXIMUM RATINGS Peak Repetitive Reverse Voltage and DC Blocking Voltage @ 50µA SDR526 SDR527 SDR528 SDR529 Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA=25oC) Peak Surge Current (8.3 ms Pulse, Half Sine Wave, Superimposed on IO, allow junction to reach equilibrium between pulses, TA=25oC) Operating and Storage Temperature Maximum Thermal Resistance Junction to Lead, L = 0.125” (Axial Lead) Junction to End Tab (Surface Mount) Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flow Available on Request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Symbol Value Units VRRM VRWM VR 600 700 800 900 Volts IO 3 Amps IFSM 75 Amps TOP & Tstg -65 to +175 RθJL RθJE 20 10 Axial DATA SHEET #: RC0049E o C o C/W Surface Mount Square Tab (SMS) DOC Solid State Devices, Inc. SDR526 thru SDR529 SDR526SMS thru SDR529SMS 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Instantaneous Forward Voltage Drop (IF = 3 ADC, 300 - 500μsec Pulse) TA = 25oC TA = -55oC VF1 VF2 –– –– 2.50 2.50 Volts Volts Reverse Leakage Current (Rated VR, 300μsec minimum pulse) TA = 25oC TA = 100oC IR1 IR2 –– –– 50 250 μA μA Junction Capacitance (VR = 10 VDC, TA = 25oC, f = 1 MHz) CJ –– 50 pF Reverse Recovery Time (IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC) trr –– 35 ns Case Outline: (Axial) Case Outline: (SMS) DIM MIN MAX A B C D 0.140” 0.170” 0.046” 1.00” 0.180” 0.230” 0.053” –– DIM MIN MAX A B C D 0.170” 0.220” 0.020” 0.002” 0.180” 0.280” 0.030” –– Note: Dimensions prior to soldering. NOTES: Consult manufacturing for operating curves. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0049E DOC