STN4526 N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. FEATURE PIN CONFIGURATION SOP-8 40V/10.0A, RDS(ON) = 25mΩ (Typ.) @VGS = 10V 40V/8.0A, RDS(ON) = 31mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING Y: Year Code A: Process Code ORDERING INFORMATION Part Number Package Part Marking STN4526 SOP-8P STN4526 ※ Process Code : A ~ Z ; a ~ z STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4526 2007. V1 STN4526 N Channel Enhancement Mode MOSFET 10.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V ID 10.0 8.0 A IDM 30 A IS 2.3 A PD 2.5 1.6 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4526 2007. V1 STN4526 N Channel Enhancement Mode MOSFET 10.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 40 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V 3.0 V VDS=0V,VGS=±20V ±100 nA VDS=40V,VGS=0V 1 VDS=40V,VGS=0V TJ=85℃ 10 Zero Gate Voltage Drain Current IDSS Drain-source OnResistance RDS(on) VGS=10V,ID=10A VGS=4.5V,ID=8A Forward Transconductance gfs VDS=15V,ID=6.2AV 13 Diode Forward Voltage VSD IS=2.3A,VGS=0V 0.8 1.2 10 14 25 31 uA mΩ S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=20V,VGS=4.5 ID≡5A 2.8 nC 3.2 Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss 75 td(on) tr 6 12 10 20 20 36 6 12 Turn-On Time Turn-Off Time td(off) tf 850 VDS =20V,VGS=0V F=1MHz VDD=20V,RL= 4Ω ID=5.0A,VGEN=10V RG=1Ω 110 pF nS TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4526 2007. V1 STN4526 N Channel Enhancement Mode MOSFET 10.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4526 2007. V1 STN4526 N Channel Enhancement Mode MOSFET 10.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4526 2007. V1 STN4526 N Channel Enhancement Mode MOSFET 10.0A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4526 2007. V1