4403 STP STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOP-8 FEATURE � � � � � � -20V/-10.0A, RDS(ON) = 20mΩ @VGS = -4.5V -20V/-8.6A, RDS(ON) = 25mΩ @VGS = -2.5V -20V/-7.6A, RDS(ON) = 35mΩ @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 Y:Year Code A:Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4403 2010. V1 4403 STP STP4403 P Channel Enhancement Mode MOSFET - 10.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V ID -10.0 -8.0 A IDM -30 A IS -2.3 A PD 2.8 1.8 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4403 2010. V1 4403 STP STP4403 P Channel Enhancement Mode MOSFET - 10.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -20 VGS(th) VDS=VGS,ID=-250uA -0.35 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V -0.9 V VDS=0V,VGS=±12V ±10 0 nA VDS=-16V,VGS=0V -1 -10 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V TJ=55℃ On-State Drain Current ID(on) VDS=-5V,VGS=-4.5V Drain-source OnResistance RDS(on) VGS=-4.5V,ID=-10A VGS=-2.5V,ID=-8.6A VGS=-1.8V,ID=-7.6A 16 20 28 Forward Transconductance gfs VDS=-5.0V,ID=-10A 36 Diode Forward Voltage VSD IS=-2.5A,VGS=0V -0.8 -1.2 30 45 -20 uA A 20 25 35 mΩ S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss Turn-On Time Turn-Off Time td(on) tr td(off) tf VDS=-10V,VGS=-5V ID≡-10.0A 4.5 nC 8.0 2670 VDS ==-10V,VGS=0V f=1MHz 520 pF 480 VDD=-10V,RL=15Ω ID=-1A,VGEN=-4.5V RG=6Ω 25 40 45 70 145 240 70 115 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4403 2010. V1 4403 STP STP4403 P Channel Enhancement Mode MOSFET - 10.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4403 2010. V1 4403 STP STP4403 P Channel Enhancement Mode MOSFET - 10.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4403 2010. V1 4403 STP STP4403 P Channel Enhancement Mode MOSFET - 10.0A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4403 2010. V1