STH260N6F6-2 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet — production data Features Order code VDSS RDS(on) max ID STH260N6F6-2 60 V < 2.4 mΩ 180 A ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness TAB 2 3 1 H2PAK-2 Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram $4!" ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STH260N6F6-2 260N6F6 H2PAK-2 Tape and reel July 2012 This is information on a product in full production. Doc ID 018784 Rev 4 1/14 www.st.com 14 Contents STH260N6F6-2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 Doc ID 018784 Rev 4 STH260N6F6-2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 180 A ID Drain current (continuous) at TC = 100 °C 180 A Drain current (pulsed) 720 A Total dissipation at TC = 25 °C 300 W 2 W/°C - 55 to 175 °C Value Unit Thermal resistance junction-case max 0.5 °C/W Thermal resistance junction-pcb max 35 °C/W Maximum lead temperature for soldering purpose 300 °C IDM (1) PTOT Derating factor Tstg Storage temperature Operating junction temperature Tj 1. Current limited by package. Table 3. Symbol Rthj-case Rthj-pcb Tl (1) Thermal data Parameter 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. Doc ID 018784 Rev 4 3/14 Electrical characteristics 2 STH260N6F6-2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 250 µA Zero gate voltage Drain current (VGS = 0) IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 60 A Symbol Parameter Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Symbol Typ. Max. 60 Unit V 1 µA 100 µA ± 100 nA 4 V 1.7 2.4 mΩ Typ. Max. Unit VDS = 60 V, TC=125 °C 2 Dynamic Ciss Table 6. Min. VDS = 60 V IDSS Table 5. 4/14 On/off states Test conditions Min. 11800 VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 30 V, ID = 120 A, VGS = 10 V (see Figure 14) - - 1235 pF - pF 488 pF 183 nC 53 - 41 nC nC Switching times Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off-delay time Fall time Test conditions VDD = 30 V, ID = 60 A RG = 4.7 Ω VGS = 10 V (see Figure 13) Doc ID 018784 Rev 4 Min. Typ. Max. Unit - 31.4 165 - ns ns - 144.4 62.6 - ns ns STH260N6F6-2 Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current 180 A ISDM (1) Source-drain current (pulsed) 720 A VSD (2) Forward on voltage ISD = 180 A, VGS = 0 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120 A, VDD = 48 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 15) ISD trr Qrr IRRM - 55.6 116 3.8 ns nC A 1. Current limited by package. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 018784 Rev 4 5/14 Electrical characteristics STH260N6F6-2 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM09068v2 ID (A) 280tok K ea his nt i ion ar xR ma at er by Op ited Lim 100 is δ=0.5 Tj=175°C Tc=25°C Single pulse ) on ( DS 0.2 100µs 0.1 1ms 10 0.05 -1 10 0.02 10ms Zth=k Rthj-c δ=tp/τ 0.01 1 Single pulse tp τ -2 0.1 0.1 Figure 4. 10 1 VDS(V) Output characteristics 10 -5 10 Figure 5. -4 -2 -3 10 -1 10 10 tp (s) 10 Transfer characteristics AM09069v1 AM09070v1 ID(A) ID (A) 400 VDS=2V 400 VGS=10V 350 350 6V 300 300 250 250 5V 200 200 150 150 100 100 50 50 0 0 Figure 6. 1 2 3 VDS(V) Normalized BVDSS vs. temperature AM09071v1 BVDSS (norm) ID=1mA 0 0 Figure 7. 1 2 4 3 5 VGS(V) Static drain-source on-resistance AM09072v2 RDS(on) (mΩ) VGS=10V 1.1 1.78 1.0 1.74 0.9 1.70 0.8 1.66 0.7 0.6 -75 6/14 -25 25 75 125 175 TJ(°C) 1.62 20 Doc ID 018784 Rev 4 40 60 80 100 ID(A) STH260N6F6-2 Figure 8. Electrical characteristics Gate charge vs. gate-source voltage Figure 9. AM09073v1 VGS (V) Capacitance variations AM09074v1 C (pF) f=1MHz VDD=30V ID=120A 12 10 10000 Ciss 1000 Coss 8 6 4 Crss 2 0 0 100 50 150 200 100 Qg(nC) Figure 10. Normalized gate threshold voltage vs. temperature AM09075v1 VGS(th) (norm) 0.1 1 Figure 11. Normalized on-resistance vs. temperature AM09076v1 RDS(on) (norm) ID=60A VGS=10V ID=250µA 1.2 VDS(V) 10 2.0 1.0 1.5 0.8 0.6 1.0 0.4 0.5 0.2 -75 25 -25 75 175 TJ(°C) 125 0 -75 -25 25 75 125 175 TJ(°C) Figure 12. Source-drain diode forward characteristics AM09077v1 VSD (V) TJ=-55°C 1.0 0.9 TJ=25°C 0.8 0.7 TJ=150°C 0.6 0.5 0.4 0 20 40 60 80 100 120 ISD(A) Doc ID 018784 Rev 4 7/14 Test circuits 3 STH260N6F6-2 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 Doc ID 018784 Rev 4 10% AM01473v1 STH260N6F6-2 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 018784 Rev 4 9/14 Package mechanical data Table 8. STH260N6F6-2 H²PAK 2 leads mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 - 10/14 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° Doc ID 018784 Rev 4 STH260N6F6-2 Package mechanical data Figure 19. H²PAK 2 leads drawing 8159712_C Doc ID 018784 Rev 4 11/14 Package mechanical data STH260N6F6-2 Figure 20. H²PAK 2 recommended footprint 12/14 Doc ID 018784 Rev 4 STH260N6F6-2 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 31-May-2011 1 First release. 25-Aug-2011 2 Updated mechanical data. 01-Feb-2012 3 Updated Table 2: Absolute maximum ratings. Minor text changes. 06-Jul-2012 4 Section 2.1: Electrical characteristics (curves) has been added. Doc ID 018784 Rev 4 13/14 STH260N6F6-2 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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