STL150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STL150N3LLH6 30 V 0.0024 Ω 33 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge PowerFLAT™ ( 6x5 ) Application ■ Figure 1. Switching applications Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order code Marking Package Packaging STL150N3LLH6 150N3LLH6 PowerFLAT™ (6x5) Tape and reel September 2009 Doc ID 15345 Rev 2 1/12 www.st.com 12 Contents STL150N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 15345 Rev 2 STL150N3LLH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 150 A ID (1) Drain current (continuous) at TC = 100 °C 93 A ID(2) Drain current (continuous) at TC = 25 °C 33 A (2) Drain current (continuous) at TC=100 °C 20.8 A (3) Drain current (pulsed) 132 A PTOT (1) Total dissipation at TC = 25 °C 80 W (3) Total dissipation at TC = 25 °C 4 W 0.03 W/°C -55 to 150 °C ID IDM PTOT Derating factor TJ Operating junction temperature Storage temperature Tstg 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 1.56 °C/W Thermal resistance junction-ambient 31.3 °C/W Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Table 4. Symbol Avalanche data Parameter IAV Not-repetitive avalanche current, (pulse width limited by Tj Max) 20 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV ) 200 mJ Doc ID 15345 Rev 2 3/12 Electrical characteristics 2 STL150N3LLH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 16.5 A VGS= 4.5 V, ID= 16.5 A V(BR)DSS Table 6. Symbol Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1 V Ω Ω 0.0016 0.0025 0.0024 0.0035 Min. Typ. Max. Unit - pF pF pF Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 - 4040 740 425 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 33 A VGS =4.5 V (see Figure 14) - 40 16.3 15.8 - nC nC nC Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain - 1.4 - Ω RG 4/12 On/off states Doc ID 15345 Rev 2 STL150N3LLH6 Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol ISD VDD=15 V, ID= 16.5 A, RG=4.7 Ω, VGS=10 V (see Figure 13) Min. Typ. Max. Unit - 17 18 75 46 - ns ns ns ns Min. Typ. Max. Unit Source drain diode Parameter Test conditions Source-drain current - 33 A (1) Source-drain current (pulsed) - 132 A (2) Forward on voltage ISD = 33 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, di/dt = 100 A/µs, VDD=25 V - ISDM VSD Turn-on delay time Rise time Turn-off delay time Fall time Test conditions trr Qrr IRRM 34 35 2.1 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 15345 Rev 2 5/12 Electrical characteristics STL150N3LLH6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM04953v1 ID (A) Tj=150°C Tc=25°C Operation in this area is Limited by max RDS(on) 100 Sinlge pulse 10 10ms 100ms 1s 1 0.1 0.01 0.1 Figure 4. ID (A) 350 10 1 VDS(V) Output characteristics AM03998v1 VGS=10V 300 300 AM03999v1 ID (A) VDS=1V 250 5V 250 200 4V 200 150 150 100 100 3V 50 50 0 0 Figure 6. 4 2 Normalized BVDSS vs temperature AM04903v1 BVDSS (norm) 0 0 VDS(V) 1.06 Figure 7. 2 4 6 8 10 VGS(V) Static drain-source on resistance AM04905v1 RDS(on) (mΩ) 4.5 VGS=10V 4.0 ID=250µA 1.04 3.5 3.0 1.02 2.5 1.00 2.0 1.5 0.98 1.0 0.96 0.94 -50 6/12 0.5 0 50 100 150 TJ(°C) 0.0 0 Doc ID 15345 Rev 2 20 40 60 80 ID(A) STL150N3LLH6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM04000v1 VGS (V) VDD=15V 12 Capacitance variations AM00893v1 C (pF) f=1MHz ID=80A 6100 10 4600 8 6 Ciss 3100 4 1600 Coss 2 Crss 0 0 Figure 10. 40 20 60 80 100 Qg(nC) 100 0 5 15 10 20 25 VDS(V) Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature AM04901v1 VGS(th) (norm) ID=250µA 1.1 AM04902v1 RDS(on) (norm) 1.6 ID=40A VGS=10V 1.4 1.0 1.2 0.8 1.0 0.8 0.6 0.6 0.4 0.4 0.2 0.2 -50 0 50 150 TJ(°C) 100 0 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04906v1 VSD (V) TJ=-50°C 1.0 0.9 0.8 TJ=25°C 0.7 TJ=175°C 0.6 0.5 0.4 0 20 40 60 80 ISD(A) Doc ID 15345 Rev 2 7/12 Test circuits 3 STL150N3LLH6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 15345 Rev 2 10% AM01473v1 STL150N3LLH6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15345 Rev 2 9/12 Package mechanical data STL150N3LLH6 PowerFLAT™(6x5) mechanical data DIM. A mm. Min. Min. 0.031 0.83 0.93 0.02 0.05 A3 0.20 0.35 D D2 0.40 0.47 0.013 4.20 0.32 0.036 0.0007 0.0019 0.015 0.163 0.165 E 6.00 0.236 5.75 0.226 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 0.70 0.80 L 0.018 0.187 4.25 E1 e Max. 0.196 4.75 4.15 Typ. 0.007 5.00 D1 10/12 inch Max. A1 b 0.80 Typ. 0.135 1.27 0.167 0.137 0.139 0.103 0.105 0.050 0.90 Doc ID 15345 Rev 2 0.027 0.031 0.035 STL150N3LLH6 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 21-Jan-2009 1 First release 08-Sep-2009 2 Document status promoted from preliminary data to datasheet Doc ID 15345 Rev 2 11/12 STL150N3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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