STL6N2VH5 N-channel 20 V, 0.025 Ω typ., 6 A STripFET™ V Power MOSFET in PowerFLAT™ 2x2 package Datasheet − preliminary data Features Order code VDSS STL6N2VH5 20 V RDS(on) max. ID PTOT 2 0.03 Ω (VGS=4.5 V) 6 A 2.4 W 0.04 Ω (VGS=2.5 V) ■ Very low switching gate charge ■ Very low thermal resistance ■ Conduction losses reduced ■ Switching losses reduced ■ 2.5 V gate drive ■ Very low threshold device 3 6 1 5 2 4 3 PowerFLAT™ 2x2 Figure 1. Applications ■ 1 Internal schematic diagram 2(D) 1(D) Switching applications 3(G) Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. D 6(D) S 5(D) 4(S) AM11269v1 Table 1. Device summary Order code Marking Package Packaging STL6N2VH5 STD1 PowerFLAT™ 2x2 Tape and reel January 2013 Doc ID 023150 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/12 www.st.com 12 Contents STL6N2VH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 6 Doc ID 023150 Rev 2 STL6N2VH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 20 V VGS Gate-source voltage ±8 V ID(1) Drain current (continuous) at Tpcb = 25 °C 6 A ID (1) Drain current (continuous) at Tpcb = 100 °C 3.75 A Drain current (pulsed) 24 A Total dissipation at Tpcb = 25 °C 2.4 W Operating junction temperature Storage temperature -55 to 150 °C Value Unit 52 °C/W IDM (1),(2) PTOT (1) TJ Tstg 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area. Table 3. Symbol Rthj-pcb (1) Thermal resistance Parameter Thermal resistance junction-pcb 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Doc ID 023150 Rev 2 3/12 Electrical characteristics 2 STL6N2VH5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 20 V, VDS = 20 V, TJ = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±8 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 4.5 V, ID = 3 A VGS =2.5 V, ID = 3 A V(BR)DSS Table 5. Symbol Min. Typ. Max. 20 Unit V 1 10 µA µA ±100 nA 0.7 V 0.025 0.031 0.03 0.04 Ω Ω Min. Typ. Max. Unit Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 16 V, f=1 MHz, VGS=0 - 550 110 16 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 10 V, ID = 6 A VGS = 4.5 V (see Figure 3) - 6 TBD TBD - nC nC nC Table 6. Switching times Symbol Parameter td(on) tr td(off) tf 4/12 On/off states Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 10 V, ID = 3 A, RG = 4.7 Ω, VGS = 4.5 V (see Figure 2) Doc ID 023150 Rev 2 Min. Typ. - TBD TBD TBD TBD Max. Unit - ns ns ns ns STL6N2VH5 Electrical characteristics Table 7. Symbol Parameter Test conditions Min Typ. Max Unit Source-drain current - 6 A (1) Source-drain current (pulsed) - 24 A (2) Forward on voltage ISD = 6 A, VGS = 0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6 A, di/dt = 100 A/µs, VDD= 16 V, TJ = 150 °C - ISD ISDM VSD Source drain diode trr Qrr IRRM TBD TBD TBD ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 023150 Rev 2 5/12 Test circuits STL6N2VH5 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 4. AM01469v1 Test circuit for inductive load Figure 5. switching and diode recovery times A A D.U.T. FAST DIODE B B Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 6. Unclamped inductive waveform AM01471v1 Figure 7. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 6/12 0 Doc ID 023150 Rev 2 10% AM01473v1 STL6N2VH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 023150 Rev 2 7/12 Package mechanical data Table 8. STL6N2VH5 PowerFLAT™ 2x2 mechanical data mm. Dim. Min. Typ. Max. A 0.70 0.75 0.80 A1 0.00 0.02 0.05 A3 8/12 0.20 b 0.25 0.30 0.35 D 1.90 2.00 2.10 E 1.90 2.00 2.10 D2 0.90 1.00 1.10 E2 0.80 0.90 1.00 e 0.55 0.65 0.75 K 0.15 0.25 0.35 K1 0.20 0.30 0.40 K2 0.25 0.35 0.45 L 0.20 0.25 0.30 L1 0.65 0.75 0.85 Doc ID 023150 Rev 2 STL6N2VH5 Figure 8. Package mechanical data PowerFLAT™ 2 x 2 drawing 8368575_REV_C Doc ID 023150 Rev 2 9/12 Package mechanical data Figure 9. STL6N2VH5 PowerFLAT™ 2 x 2 recommended footprint (dimensions in millimeters) Footprint 10/12 Doc ID 023150 Rev 2 STL6N2VH5 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 24-Apr-2012 1 First release. 10-Jan-2013 2 – Modified: RDS(on) values – Document status promoted from target data to preliminary data Doc ID 023150 Rev 2 11/12 STL6N2VH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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