LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS ESD gate protection The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification. Applications ► ► ► ► ► ► Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Ordering Information Device Package Options BVDSX/BVDGX RDS(ON) IDSS (min) (mA) 1.0 TO-236AB (SOT-23) TO-92 TO-243AA (SOT-89) (V) (max) (KΩ) LND150K1-G LND150N3-G LND150N8-G 500 1.0 LND150 -G indicates package is RoHS compliant (‘Green’) Pin Configurations DRAIN Absolute Maximum Ratings SOURCE Parameter Value Drain-to-source BVDSX Drain-to-gate BVDGX Gate-to-source ±20V Operating and storage temperature Soldering temperature* SOURCE SOURCE -55 C to +150OC O 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * GATE TO-92 (N3) DRAIN DRAIN GATE GATE TO-236AB (SOT-23) (K1) SOURCE TO-243AA (SOT-89) (N8) Distance of 1.6mm from case for 10 seconds. Product Marking NDEW W = Code for Week Sealed = “Green” Packaging TO-236AB (SOT-23) (K1) Si L N D1 5 0 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging TO-92 (N3) LN1EW W = Code for Week Sealed = “Green” Packaging TO-243AA (SOT-89) (N8) Packages may or may not include the following marks: Si or ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com LND150 Thermal Characteristics ID ID Power Dissipation ( C/W) IDR (mA) IDRM† 200 350 13 30 0.74 125 170 30 30 1.6‡ 15 78 30 30 θjc Package (continuous)† (mA) (pulsed) (mA) @TA = 25OC (W) ( C/W) TO-236AB (SOT-23) 13 30 0.36 TO-92 30 30 TO-243AA (SOT-89) 30 30 O O θja (mA) Notes: † ID (continuous) is limited by max rated Tj. ‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSX Drain-to-source breakdown voltage 500 - - V VGS = -10V, ID = 1.0mA VGS(OFF) Gate-to-source off voltage -1.0 - -3.0 V VGS = 25V, ID = 100nA - - 5.0 - - 100 nA VGS = ± 20V, VDS = 0V - - 100 nA VGS = -10V, VDS = 450V - - 100 µA VDS = 0.8V Max Rating, VGS = -10V, TA = 125OC 1.0 - 3.0 mA VGS = 0V, VDS = 25V Static drain-to-source on-state resistance - 850 1000 Ω VGS = 0V, ID = 0.5mA Change in RDS(ON) with temperature - - 1.2 O %/ C VGS = 0V, ID = 0.5mA 1.0 2.0 - m Ω VDS = 0V, ID = 1.0mA ΔVGS(OFF) Change in VGS(OFF) with temperature IGSS Gate body leakage current ID(OFF) Drain-to-source leakage current IDSS Saturated drain-to-source current RDS(ON) ΔRDS(ON) GFS Forward transductance CISS Input capacitance - 7.5 10 COSS Common source output capacitance - 2.0 3.5 CRSS Reverse transfer capacitance - 0.5 1.0 td(ON) Turn-on delay time - 0.09 - Rise time - 0.45 - Turn-off delay time - 0.1 - Fall time - 1.3 - Diode forward voltage drop - - Reverse recovery time - 200 tr td(OFF) tf VSD trr Conditions mV/ C VGS = 25V, ID = 100nA O pF VGS = -10V, VDS = 25V, f = 1.0MHz µs VDD = 25V, ID = 1.0mA, RGEN = 25Ω 0.9 V VGS = -10V, ISD = 1.0mA - ns VGS = -10V, ISD = 1.0mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V VDD 90% PULSE GENERATOR INPUT -10V 10% t(ON) td(ON) VDD OUTPUT 0V t(OFF) tr 10% td(OFF) RL OUTPUT RGEN tf D.U.T. 10% INPUT 90% 90% ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 2 LND150 Typical Performance Curves Output Characteristics 6 Saturation Characteristics 6 VGS = 1.0V 5 4 4 ID (milliamps) ID (milliamps) VGS = 1.0V 5 0.5V 3 2 0.5V 3 2 0V 1 0V 1 -0.5V 0 0 -0.5V -1.0V 500 250 0 0 1 2 VDS (V) Transconductance vs. Drain Current 10 2 VDS = 400V PD (Watts) GFS (millisiemens) Power Dissipation vs. Ambient Temperature 25°C 4 125°C 1 TO-92 TO-236AB 2 0 2 4 6 ID (milliamps) 8 0 10 Maximum Rated Safe Operating Area TO-243AA (DC) Pulsed TO-92 (DC) 10 TO-236 (DC) 1 TA = 25°C 300µs pulse 2% duty cycle 1 10 100 0 1.0 Thermal Resistance (normalized) 100 ID (milliamps) -1.0V TA = -55°C 6 0.1 5 TO-243AA 8 0 VDS (V) 4 3 VDS (V) 75 TA (°C) 100 125 150 Thermal Response Characteristics TO-243AA TA = 25°C PD = 1.2W 0.8 0.6 0.4 TO-92 PD = 1.0W TC = 25°C 0.2 0 0.001 1000 50 25 0.01 0.1 tP (seconds) 1.0 10 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 3 LND150 Typical Performance Curves (cont.) BVDSS Variation with Temperature VGS = -5.0V 1.2 1.0 125°C RSOURCE 0.8 0.6 0.4 0.2 0.9 0 50 100 0.0 10 150 Tj (OC) Transfer Characteristics 10 1.8 VDS = 400V 100 1K 10K RSOURCE (Ω) 100K VGS(OFF) and RDS Variation with Temperature 2.0 1.6 VGS(OFF) (normalized) TA = -55°C 25°C 125°C 5 RDS(ON) @ ID = 1.0mA 1.6 1.4 1.2 1.2 0.8 VGS(OFF) @ 100nA 1.0 0.4 0 -1 0 1 VGS (V) 2 0.8 -50 3 50 100 150 Tj (OC) Capacitance vs. Drain-to-Source Voltage 10 0 Gate Drive Dynamic Characteristics 10 VGS = -10V 8.7pF VDS = 20V 5 40V 60V VGS (V) C (picofarads) CISS 5 0 COSS CRSS 0 0 10 20 30 -5 40 0 0.1 0.2 0.3 QC (nanocoulombs) VDS (V) ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 4 RDS(ON) (normalized) -50 ID (millimeter) ID ↓ LND1 25°C 1.0 ID (milliamps) BVDSS (normalized) 1.1 ID vs RSOURCE 1.4 LND150 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 Seating Plane L 2 e L1 b e1 Top View A View B A View B A2 Seating Plane A1 Side View Symbol Dimension (mm) MIN View A - A A A A1 A2 b D E E1 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e 0.95 BSC e1 1.90 BSC L 0.20 L1 † 0.50 0.60 0.54 REF JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 5 θ 0O 8O LND150 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b MIN .170 .014 NOM - - MAX .210 .022 c † .014 † D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* † .022 † JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 6 LND150 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 E1 3 2 b b1 e A e1 Side View Top View Symbol Dimensions (mm) A b b1 C D D1 E E1 MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version E051509. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2009 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-LND150 B021110 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 7