TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Low threshold (2.0V max.) High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Applications ► ► ► ► ► ► ► Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device TN2640 Package Options TO-252 (D-PAK) 8-Lead SOIC TN2640K4-G TN2640LG-G TO-92 Die* BVDSS/BVDGS RDS(ON) VGS(th) ID(ON) (V) (max) (Ω) 400 5.0 2.0 2.0 TN2640N3-G TN2640ND -G indicates package is RoHS compliant (‘Green’) * MIL visual screening available (max) (V) Pin Configurations DRAIN DRAIN DRAIN DRAIN DRAIN GATE SOURCE N/C N/C SOURCE GATE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature Soldering temperature* -55°C to +150°C TO-252 (D-PAK) (K4) 8-Lead SOIC (LG) DRAIN SOURCE +300°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * (min) (A) TO-92 (N3) GATE Distance of 1.6mm from case for 10 seconds. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com TN2640 Product Marking Si YYWW TN2640 LLLLLLL YY = Year Sealed WW = Week Sealed L = Lot Number = “Green” Packaging YYWW N2640 LLLL Package may or may not include the following marks: Si or YY = Year Sealed WW = Week Sealed L = Lot Number = “Green” Packaging Package may or may not include the following marks: Si or TO-252 (D-PAK) (K4) 8-Lead SOIC (LG) SiTN 2640 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 (N3) Thermal Characteristics ID ID Power Dissipation ( C/W) IDR† (mA) IDRM 6.25 50 500 3.0 24 96 ‡ 260 2.0 125 170 220 2.0 θjc Package (continuous)† (mA) (pulsed) (A) @TA = 25OC (W) ( C/W) TO-252 (D-PAK) 500 3.0 2.5‡ 8-Lead SOIC 260 2.0 1.3 TO-92 220 2.0 0.74 O ‡ O θja (A) Notes: † ID (continuous) is limited by max rated Tj. ‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 400 - - V VGS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 0.8 - 2.0 V VGS = VDS, ID = 2.0mA Change in VGS(th) with temperature - -2.5 -4.0 mV/OC VGS = VDS, ID = 2.0mA Gate body leakage - 100 nA VGS = ±20V, VDS = 0V ΔVGS(th) IGSS Conditions - - 10 µA VGS = 0V, VDS = Max rating - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC 1.5 3.5 - 2.0 4.0 - IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) Static drain-to-source on-state resistance - 3.2 5.0 - 3.0 5.0 Change in RDS(ON) with temperature - - 0.75 %/OC VGS = 10V, ID = 500mA 200 330 - mmho VDS = 25V, ID = 100mA ΔRDS(ON) GFS Forward transconductance CISS Input capacitance - 210 225 COSS Common source output capacitance - 30 50 CRSS Reverse transfer capacitance - 8.0 15 A Ω pF VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 4.5V, ID = 500mA VGS = 10V, ID = 500mA VGS = 0V, VDS = 25V, f = 1.0MHz ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 2 TN2640 Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter td(ON) tr td(OFF) tf VSD trr Min Typ Max Units Conditions Turn-on delay time - 4.0 15 Rise time - 15 20 ns VDD = 25V, ID = 2.0A, RGEN = 25Ω Turn-off delay time - 20 25 Fall time - 22 27 Diode forward voltage drop - - 0.9 V VGS = 0V, ISD = 200mA Reverse recovery time - 300 - ns VGS = 0V, ISD = 1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. N- Channel Switching Waveforms and Test Circuit VDD 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V t(OFF) tr 10% 90% td(OFF) RL OUTPUT RGEN tf 10% INPUT 90% ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 3 D.U.T. TN2640 Typical Performance Curves Output Characteristics Saturation Characteristics 5.0 2.5 4.0 VGS = 10V 8V 2.0 6V 3.0 6V 8V ID (amperes) ID (amperes) VGS = 10V 4V 2.0 3V 1.0 4V 1.5 3V 1.0 0.5 2V 2V 0 0 10 20 30 VDS (volts) 40 0 0 50 2 4 8 6 10 VDS (volts) Power Dissipation vs. Temperature Transconductance vs. Drain Current 2.0 3.0 1.6 2.4 VDS = 25V 1.2 PD (watts) GFS (siemens) DPAK TA = -55°C 0.8 1.8 SO-8 1.2 TO-92 0.4 0.6 25°C 125°C 0 0 1.0 2.0 3.0 4.0 0 5.0 0 25 50 ID (amperes) 150 Thermal Resistance (normalized) 1.0 TO-92 (pulsed) 1.0 ID (amperes) 125 100 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 DPAK (DC) SO-8 (pulsed) TO-92 (DC) 0.1 SO-8 (DC) 0.01 0.001 75 TA (°C) TC = 25°C 0 10 100 VDS (volts) 1000 0.8 0.6 0.4 TO-92 0.2 0 0.001 TC = 25°C PD = 1.0W 0.01 0.1 1.0 tp (seconds) ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 4 10 TN2640 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.15 10 1.10 8 RDS(ON) (ohms) BVDSS (normalized) VGS = 5V 1.05 1.00 0.95 VGS = 10V 6 4 2 0.9 0.90 0 -50 0 50 100 150 0 1.0 2.0 3.0 4.0 5.0 ID (amperes) Tj (°C) Transfer Characteristics VTH and RDS Variation with Temperature 3.0 1.4 2.2 25°C V(th) @ 2mA 125°C TA = -55°C 1.8 1.2 VDS = 25V 0.6 1.0 1.4 0.8 1.0 0.6 0 1.8 0.6 RDS(ON)@ 10V, 0.5A 0.4 0 2 4 6 8 0.2 -50 10 0 50 VGS (volts) 100 150 Tj (°C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 400 f = 1MHz 8 653pF 200 VGS (volts) C (picofarads) 300 CISS 6 VDS = 10V 4 VDS = 40V 100 2 COSS 253pF CRSS 0 0 10 20 30 VDS (volts) 0 40 0 1 2 3 4 5 QG (nanocoulombs) ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 5 RDS(ON) (normalized) 1.2 VGS(th) (normalized) ID (amperes) 2.4 TN2640 3-Lead TO-252 D-PAK Package Outline (K4) b3 E A c2 E1 4 L3 θ1 D1 H D 1 2 3 L4 L5 Note 1 b2 Front View View B b e Side View Rear View Gauge Plane A1 Seating Plane L2 θ L L1 View B Note: 1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed. Symbol Dimension (inches) MIN A A1 b b2 b3 c2 D D1 E E1 .086 .000* .025 .030 .195 .018 .235 .205 .250 .170 NOM - - - - - - .240 - - - MAX .094 .005 .035 .045 .215 .035 .245 .217* .265 .182* e .090 BSC H L .370 .055 - .060 .410 .070 L1 .108 REF L2 .020 BSC L3 L4 L5 θ θ1 .035 .025* .045 0 0O - - - - .050 .040 .060 10 JEDEC Registration TO-252, Variation AA, Issue E, June 2004. * This dimension is not specified in the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO252K4, Version E041309. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 6 O O 15O TN2640 8-Lead SOIC (Narrow Body) Package Outline (LG) 4.90x3.90mm body, 1.75mm height (max), 1.27mm pitch D θ1 8 E E1 L2 Note 1 (Index Area D/2 x E1/2) L 1 θ L1 Top View Gauge Plane Seating Plane View B A View B Note 1 h h A A2 Seating Plane b e A1 A Side View View A-A Note: 1. This chamfer feature is optional. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier; an embedded metal marker; or a printed indicator. Symbol Dimension (mm) A A1 A2 b MIN 1.35* 0.10 1.25 0.31 NOM - - - - MAX 1.75 0.25 1.65* 0.51 D E E1 4.80* 5.80* 3.80* 4.90 6.00 3.90 5.00* 6.20* 4.00* e 1.27 BSC h L 0.25 0.40 - - 0.50 1.27 L1 1.04 REF L2 0.25 BSC JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005. * This dimension is not specified in the JEDEC drawing. Drawings are not to scale. Supertex Doc. #: DSPD-8SOLGTG, Version I041309. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 7 θ θ1 0O 5O - - 8 15O O TN2640 3-Lead TO-92 Package Outline (N3) D A 1 Seating Plane 2 3 L b e1 e c Side View Front View E1 E 3 1 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. ©2009 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2640 B072809 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 8