SPN4412B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4412B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V 30V/5.6A,RDS(ON)= 42mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) PART MARKING 2011/ 03/ 25 Ver.0 (Preliminary) Page 1 SPN4412B N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 S Source 2 S Source 3 S Source 4 G 5 D Gate Drain 6 D Drain 7 D Drain 8 D Drain ORDERING INFORMATION Part Number Package SPN4412BS8RGB SOP- 8P Part Marking SPN4412B ※ SPN4412BS8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) TA=25℃ Power Dissipation TA=70℃ Operating Junction Temperature ID 7.2 5.8 A IDM 30 A IS 2.3 A PD 2.5 1.6 W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W 2011/ 03/ 25 Ver.0 (Preliminary) Page 2 SPN4412B N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS≥5V,VGS =10V Forward Transconductance gfs Diode Forward Voltage VSD IS=2.3A,VGS =0V RDS(on) 0.6 1.8 VDS=0V,VGS=±20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=85℃ VGS= 10V,ID=6.8A VGS=4.5V,ID=5.6A VDS=15V,ID=6.2A Drain-Source On-Resistance 30 ±100 1 5 25 V nA uA A 0.030 0.037 13 0.035 0.042 0.8 1.2 16 24 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 38 td(on) 15 20 6 12 10 20 40 80 Turn-On Time tr td(off) Turn-Off Time 2011/ 03/ 25 Ver.0 tf (Preliminary) VDS=15V,VGS=10V ID= 2A nC 3 2.5 VDS=15VGS=0V f=1MHz VDD=15V,RL=15Ω ID≡1.0A,VGEN=10V RG=6Ω 450 pF 240 nS Page 3 SPN4412B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/ 03/ 25 Ver.0 (Preliminary) Page 4 SPN4412B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/ 03/ 25 Ver.0 (Preliminary) Page 5 SPN4412B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/ 03/ 25 Ver.0 (Preliminary) Page 6 SPN4412B N-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2011/ 03/ 25 Ver.0 (Preliminary) Page 7 SPN4412B N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011/ 03/ 25 Ver.0 (Preliminary) Page 8