SPN8902 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8902 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS High Frequency Small Power Switching for MB/NB/VGA Network DC/DC Power System Load Switch FEATURES 100V/2A, RDS(ON)= 330mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-223 package design PIN CONFIGURATION SOT-223 PART MARKING 2012/07/30 V.1 Page 1 SPN8902 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 D Drain 3 S Source Package Part Marking ORDERING INFORMATION Part Number SPN8902S22RGB SOT-223 ※ SPN8902S22RGB : Tape Reel ; Pb – Free ; Halogen – Free ※ Date code : YY (year 00~99) , WW(week 01~53) 8902 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ ID 2.2 1.7 A IDM 5.5 A PD 2.8 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 90 ℃/W Pulsed Drain Current Power Dissipation TA=25℃ Operating Junction Temperature 2012/07/30 V.1 Page 2 SPN8902 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. V(BR)DSS VGS=0V,ID=250uA 100 Typ Max. 1.5 2.5 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) 1 VDS=0V,VGS=±20V VDS=80V,VGS=0V VDS=80V,VGS=0V TJ=125℃ VDS≥5V,VGS =10V Drain-Source On-Resistance RDS(on) Forward Transconductance gfs VGS= 10V,ID=2A VGS= 4.5V,ID=1A VDS=5V,ID=2A Diode Forward Voltage VSD IS=1A,VGS =0V ±100 1 5 2.2 V nA uA A 0.31 0.33 2.4 0.33 0.35 Ω Ω S 1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss 9 VDS=50V,VGS=10V ID= 2A 1.4 508 VDS=15V,VGS=0V f=1MHz Coss Reverse Transfer Capacitance Crss 16.5 td(on) 2 Turn-Off Time 2012/07/30 V.1 tr td(off) tf nC 2 Output Capacitance Turn-On Time 13 VDD=50V, ID=2A, VGEN=10V, RG=3.3Ω pF 29 21.5 nS 11.2 18.8 Page 3 SPN8902 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Output Characteristics Gate Charge 2012/07/30 V.1 Capacitance On-Resistance vs. Junction Temperature Page 4 SPN8902 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage Normalized Thermal Transient Impedance, Junction to Foot 2012/07/30 V.1 Page 5 SPN8902 N-Channel Enhancement Mode MOSFET SOT-223 PACKAGE OUTLINE 2012/07/30 V.1 Page 6 SPN8902 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2012\ SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2012/07/30 V.1 Page 7