SYNC-POWER SPP2311S23RGB

SPP2311
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP2311 is the P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
 Drivers : Relays/Solenoids/Lamps/Hammers
 Power Supply Converter Circuits
 Load/Power Switching Cell Phones, Pagers
FEATURES

P-Channel
-20V/0.45A,RDS(ON)= 0.65Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.90Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 1.5Ω@VGS=-1.8V
-20V/0.25A,RDS(ON)= 3.0Ω@VGS=-1.5V

Super high density cell design for extremely low
RDS (ON)

Exceptional on-resistance and maximum DC
current capability

SOT-23 package design
PIN CONFIGURATION( SOT-23 )
PART MARKING
2013/10/18 Ver.1
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SPP2311
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
S
Source
3
D
Drain
ORDERING INFORMATION
Part Number
Package
SPP2311S23RGB
SOT-23
Part
Marking
S11
※ SPP2311S23RGB : Tape Reel ; Pb – Free, Halogen – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate –Source Voltage
VGSS
±12
V
ID
-0.45
A
IDM
A
A
W
℃
℃
Continuous Drain Current(TJ=150℃)
TA=25℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
IS
Power Dissipation
PD
-1.0
-0.3
0.15
TJ
TSTG
-55/150
-55/150
Operating Junction Temperature
Storage Temperature Range
2013/10/18 Ver.1
TA=25℃
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SPP2311
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
VDS≤ -4.5V,VGS =-5V
Forward Transconductance
gfs
Diode Forward Voltage
VSD
IS=-0.15A,VGS=0V
RDS(on)
-0.35
-1.0
VDS=0V,VGS=±12V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=55℃
VGS=-4.5V,ID=-0.45A
VGS=-2.5V,ID=-0.35A
VGS=-1.8V,ID=-0.25A
VGS=-1.5V,ID=-0.25A
VDS=-10V,ID=-0.25A
Drain-Source On-Resistance
-30
±30
-1
-5
-0.7
V
uA
uA
A
550
750
1100
2200
0.4
650
900
1500
3000
-0.8
-1.2
1.5
2.0
mΩ
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Time
Turn-Off Time
2013/10/18 Ver.1
VDS=-10V,VGS=-4.5V ,ID
≡-0.6A
td(on)
tr
td(off)
tf
VDD=-10V,RL=10Ω ,
ID≡-0.4A
VGEN=-4.5V ,RG=6Ω
0.3
nC
0.35
5
10
15
25
8
15
1.4
1.8
Page 3
ns
SPP2311
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2013/10/18 Ver.1
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SPP2311
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2013/10/18 Ver.1
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SPP2311
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2013/10/18 Ver.1
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SPP2311
P-Channel Enhancement Mode MOSFET
SOT-23 PACKAGE OUTLINE
2013/10/18 Ver.1
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SPP2311
P-Channel Enhancement Mode MOSFET
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Phone: 886-2-2655-8178
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2013/10/18 Ver.1
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