SPP3052 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3052 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management. The package is universally preferred for commercial industrial surface mount applications APPLICATIONS z Power Management in Desktop Computer z DC/DC Converter z LCD Display inverter FEATURES -30V/- 25A,RDS(ON)=50mΩ@VGS=-10V -30V/- 16A,RDS(ON)=85mΩ@VGS=- 5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252-2L package design PIN CONFIGURATION ( TO-252-2L ) PART MARKING 2011/09/22 Ver.4 Page 1 SPP3052 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S 3 D Source Drain ORDERING INFORMATION Part Number Package Part Marking SPP3052T252RG TO-252-2L SPP3052 SPP3052T252RGB TO-252-2L SPP3052 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP3052T252RG : Tape Reel ; Pb – Free ※ SPP3052T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.14mH , IAS = 43A , VDD = 20V. ) ID -25 -18 A IDM -100 A IS -15 A PD 40 20 W EAS 129 mJ TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 ℃/W Operating Junction Temperature 2011/09/22 Ver.4 Page 2 SPP3052 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Forward Transconductance gfs VDS=0V,VGS=±20V VDS=-21V,VGS=0V VDS=-21V,VGS=0V TJ=55℃ VGS=-10V,ID=-25A VGS=- 5V,ID=-16A VDS=-10V,ID=-8A Zero Gate Voltage Drain Current IDSS Diode Forward Voltage VSD IS=-16A,VGS =0V Drain-Source On-Resistance RDS(on) -30 -1.0 -3.0 ±100 -2 -5 0.040 0.068 8 0.050 0.085 -0.8 -1.2 16 24 V nA uA Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2011/09/22 Ver.4 VDS=-15V,VGS=-10V ID= -3.5A 4.5 VDS=-15V,VGS=0V f=1MHz td(on) tr td(off) tf nC 2.3 VDD=-15V,RL=15Ω ID≡-1.0A,VGEN=-10V RG=6Ω 680 pF 120 75 14 25 15 26 42 70 30 50 ns Page 3 SPP3052 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/22 Ver.4 Page 4 SPP3052 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/22 Ver.4 Page 5 SPP3052 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/09/22 Ver.4 Page 6 SPP3052 P-Channel Enhancement Mode MOSFET TO-252-2L PACKAGE OUTLINE 2011/09/22 Ver.4 Page 7 SPP3052 P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2011/09/22 Ver.4 Page 8