TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF10150CT SCHOTTKY BARRIER RECTIFIER TO-220F FEATURES Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit 150 V 105 V 10 A 120 A Power dissipation 2 W Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage VR(RMS) RMS reverse voltage Average rectified output current IO IFSM PD RΘJA Non-Repetitive peak forward surge current 8.3ms half sine wave ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=0.1mA Reverse current IR VR=150V 0.2 mA Forward voltage VF IF=5A 0.85 V Typical total capacitance Ctot VR=5V,f=1MHz 150 V 500 pF A,Jun,2011 Typical Characteristics MBRF10150CT Reverse Characteristics Forward Characteristics 1000 100 Ta=100℃ REVERSE CURRENT IR FORWARD CURRENT Ta=100℃ (uA) 1000 IF (mA) 10000 100 Ta=25℃ 10 10 1 Ta=25℃ 0.1 0.01 1 1E-3 0 200 400 600 FORWARD VOLTAGE 800 1000 0 60 90 REVERSE VOLTAGE 120 VR 150 (V) Power Derating Curve Capacitance Characteristics Per Diode 300 30 VF (mV) 2.5 Ta=25℃ f=1MHz 2.0 PD 200 POWER DISSIPATION JUNCTION CAPACITANCE CJ (pF) (W) 250 150 100 1.5 1.0 0.5 50 0 0.0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) A,Jun,2011