TIGER ELECTRONIC CO.,LTD TO-220F Plastic-Encapsulate Diodes MBRF2545CT TO-220F SCHOTTKY BARRIER RECTIFIER FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss, High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 1.ANODE 2.CATHODE 3.ANODE 1 2 2 3 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Value Unit 45 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 32 V IO 30 A IRRM 1.0 A IFSM 150 A Average Rectified Output Current (Note 1) Tc=130℃ Peak Repetitive Reverse Surge Current (Note 3) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load Forward Voltage Drop (JEDEC Method) @ IF=30A, TC=125℃ @ IF=30A, TC= 25℃ Peak Reverse Current @ TC= 25℃ at Rated DC Blocking Voltage @ TC=125℃ Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted heat sink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3．2.0μs pulse width, f = 1.0KHz. VFM IRM CT 0.73 0.82 0.2 40 750 RθJC 1.5 Tj,TSTG -55~+125 V mA pF ℃/W ℃ A,Jun,2011