TGS MBRF30200CT

TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF30200CT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
 Schottky Barrier Chip
 Guard Ring Die Construction for Transient Protection
 Low Power Loss,High Efficiency
 High Surge Capability
 High Current Capability and Low Forward Voltage Drop
 For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM
Working peak reverse voltage
Value
Unit
200
V
VR
DC blocking voltage
VR(RMS)
RMS reverse voltage
140
V
Average rectified output current
30
A
200
A
Power dissipation
2
W
Thermal resistance from junction to ambient
50
℃/W
Tj
Junction temperature
125
℃
Tstg
Storage temperature
-55~+150
℃
IO
IFSM
PD
RΘJA
Non-Repetitive peak forward surge current
8.3ms half sine wave
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Reverse voltage
V(BR)
Reverse current
IR
VR=200V
0.1
mA
Forward voltage
VF
IF=15A
0.95
V
Typical total capacitance
Ctot
VR=4V,f=1MHz
IR=1mA
200
V
800
pF
A,Nov,2010