MCR310-6G thru MCR310-10G ® Pb MCR310-6G thru MCR310-10G Pb Free Plating Product SENSITIVE & STANDARD(10A SCRs) Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Simplified outline Symbol Applications: Motor control a k Industrial and domestic lighting Heating g Static switching TO-220C Pin Description 1 Anode 3 Gate V DRM Features Cathode 2 SYMBOL 3 12 Blocking voltage to 800 V On-state RMS current to 10 A Ultra low gate trigger current PARAMETER Value UNIT MCR310-6G MCR310-8G 400 600 V MCR310-10G 800 V On-state rms current 10 A Peak non-repetitive surge current 100 A Repetitive peak off-state voltages o (Tj=-40 to 110 C 1/2Sine Wave,RGK=1K IT RMS I TSM SYMBOL Rth j-c Rth j-a PARAMETER MIN TYP MAX Thermal resistance Junction to Case - - 2.2 /W Thermal resistance Junction to ambient - - 60 /W CONDITIONS UNIT Page 1/3 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MCR310-6G thru MCR310-10G ® Limiting values in accordance with the Maximum system(IEC 134) SYMBOL V DRM V RRM PARAMETER CONDITIONS Repetitive peak off-state Voltages RMS on-state current Tj=-40to110,1/2Sine Wave,RGK=1k I TSM Non-repetitive peak On-state current 1/2Cycle.60 Hz, Tj=-40 to110 I 2t I GM V GM P GM P G(AV) T stg I t for fusing I T(RMS) 2 Forward peak gate current Peak gate voltage Peak gate power Average gate power MAX - 400 600 800 V - 10 A - A A -40 100 40 1.0 +5 5 0.75 +150 -40 +110 0 180 Cconduction angles;TC=75 T=8.3ms T<=10us,TC=83 T<=10us,TC=83 T<=10us,TC=83 T<=10us,TC=83 Storage temperature Operating junction Temperature Range Tj MIN MCR310-6 MCR310-8 MCR310-10 UNIT 2 AS A V W W O T J=25 C unless otherwise stated SYMBOL PARAMETER MIN CONDITIONS TYP MAX UNIT Static characteristics I GT Gate trigger current V D=12V; RL=100 - 30 200 A I DRM Peak Forward Blocking current o Tj=110 C,V D=Rated V DRM TC=110 TC=25 - - 500 10 A I RRM Peak Reverse Blocking current Tj=110 oC,V R=Rated V RRM TC=110 TC=25 - - 500 10 A - 6 2.2 mA 1.7 0.5 1.5 V 0.1 - - V - 10 - V/ s - 1 - s - - - s IH V TM V GT V GD Holding current V D=12V;ITM=100mA Peak forward on-state voltage I TM=20A peak,pulse width<=1ms Gate trigger voltage V D=12V;RL=100 Gate non-trigger voltage V D=Rated V DRM;R L=10K T J=110 - V Dynamic Characteristics D V/dt Critical rate of rise of Off-state voltage V D=Rated V DRM,R GK=1K ;Tj=110 Exponential waveform; t gt Gate controlled turn-on time I TM=16A;V D=Rated V DRM,IG=2mA tg Crcuit commutated tumoff time ; Page 2/3 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MCR310-6G thru MCR310-10G ® Description Page 3/3 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/