TS9004 Low-Power Single/Dual-Supply Quad Comparator with Reference FEATURES DESCRIPTION ♦ Ultra-Low Quiescent Current: 5.1μA (max), All comparators plus Reference ♦ Single or Dual Power Supplies: Single: +2.5V to +11V Dual: ±1.25V to ±5.5V ♦ Input Voltage Range Includes Negative Supply ♦ 7μs Propagation Delay ♦ Push-pull TTL/CMOS-Compatible Outputs ♦ Separate Output GND Pin ♦ Crowbar-Current-Free Switching ♦ Continuous Source Current Capability: 40mA ♦ Internal 1.182V ±1% Reference ♦ 16-pin Narrow SOIC Package The TS9004 low-voltage, micropower quad analog comparator is form-factor identical to the MAX934 analog comparator with improved electrical specifications. Ideal for 3V or 5V single-supply applications, the TS9004 draws 22% lower supply current with a 50%-better initial accuracy reference voltage. The TS9004 joins Touchstone’s TS9001-1/2 and TS9002 analog comparators in the “NanoWatt Analog™” high performance analog integrated circuits portfolio. This quad comparator can operate from single +2.5V to +11V supplies or from ±1.25V to ±5.5V dual supplies. The TS9004 exhibits an input voltage range from the negative supply rail to within 1.3V of the positive supply. In addition, its push-pull output stage is TTL/CMOS compatible and capable of sinking and sourcing current. It also incorporates an internal 1.182V ±1% voltage reference. A GND connection available at the TS9004’s output stage enables TTL compatibility and bipolar-to-single ended conversion. APPLICATIONS Threshold Detectors Window Comparator Level Translators Oscillator Circuits Battery-Powered Systems The TS9004 is fully specified over the -40ºC to +85ºC temperature range and is available in a 16-pin narrow SOIC package. TYPICAL APPLICATION CIRCUIT Using a TS9004 in a 5V Bar-Graph Level Gauge Application The Touchstone Semiconductor logo is a registered trademark of Touchstone Semiconductor, Incorporated. Page 1 © 2012 Touchstone Semiconductor, Inc. All rights reserved. TS9004 ABSOLUTE MAXIMUM RATINGS Supply Voltage (V+ to V-, V+ to GND, GND to V-)......-0.3V, +12V Voltage Inputs (IN+, IN-)..............................................(V+ + 0.3V) to (V- - 0.3V) Output Voltage REF..................................................... (V+ + 0.3V) to (V- - 0.3V) OUT ................................................(V+ + 0.3V) to (GND - 0.3V) Input Current (IN+, IN-)...........................................................20mA Output Current REF…………………………………………………………….20mA OUT………………………………………………………...….40mA Output Short-Circuit Duration (V+ ≤ 5.5V) ....................Continuous Continuous Power Dissipation (TA = +70°C) 16-Pin SOIC (derate 8.7mW/°C above +70°C) ................696mW Operating Temperature Ranges..............................-40°C to +85°C Storage Temperature Range ................................-65°C to +150°C Lead Temperature (soldering, 10s) .....................................+300°C Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime. PACKAGE/ORDERING INFORMATION ORDER NUMBER PART CARRIER QUANTITY MARKING TS9004ISN16TP Tube 48 Tape & Reel 2500 TS9004I TS9004ISN16T Lead-free Program: Touchstone Semiconductor supplies only lead-free packaging. Consult Touchstone Semiconductor for products specified with wider operating temperature ranges. Page 2 TS9004DS r1p0 RTFDS TS9004 ELECTRICAL CHARACTERISTICS – 5V OPERATION V+ = 5V, V- = GND = 0V; TA = -40ºC to +85ºC, unless otherwise noted. Typical values are at TA = +25ºC. See Note 1. PARAMETER POWER REQUIREMENTS Supply Voltage Range Supply Current CONDITIONS MIN See Note 2 IN+ = IN- + 100mV TYP MAX UNITS 11 5.1 8 V 4.1 2.5 TA = +25°C -40°C to +85°C µA COMPARATOR Input Offset Voltage VCM = 2.5V Input Leakage Current (IN-, IN+) IN+ = IN- = 2.5V Input Common-Mode Voltage Range Common-Mode Rejection Ratio Power-Supply Rejection Ratio Output Voltage Noise Response Time (High-to-Low Transition) Response Time (Low-to-High Transition) Output High Voltage Output Low Voltage TA = +25°C -40°C to +85°C TA = +25°C -40°C to +85°C ±0.01 ±0.01 V- V- to (V+ – 1.3V) V+ = 2.5V to 11V 100Hz to 100kHz Overdrive = 10 mV Overdrive = 100 mV Overdrive = 10 mV TA = +25°C, 100pF Load Overdrive = 100 mV -40°C to +85°C; IOUT = 17mA -40°C to +85°C; IOUT = 1.8mA Dual Supply -40°C to +85°C; IOUT = 1.8mA 0.1 0.1 20 17 7 17 7 TA = +25°C, 100pF Load ±4.5 ±10 ±2 ±5 V+ – 1.3V 1 1 mV nA V mV/V mV/V μVRMS μs μs V+ – 0.4 GND + 0.4 V- + 0.4 V V V REFERENCE Reference Voltage Reference Line Regulation 2.5V ≤ (V+ - V-) ≤ 5V Source Current ∆VREF = 1% Sink Current ∆VREF = 1% Output Voltage Noise 100Hz to 100kHz TS9004DS r1p0 TA = +25°C -40°C to +85°C TA = +25°C TA = +25°C -40°C to +85°C TA = +25°C -40°C to +85°C 1.170 1.158 20 6 10 4 1.182 0.25 25 15 100 1.194 1.206 V mV/V μA μA μVRMS Page 3 RTFDS TS9004 ELECTRICAL CHARACTERISTICS – 3V OPERATION V+ = 3V, V- = GND = 0V; TA = -40ºC to +85ºC, unless otherwise noted. Typical values are at TA = +25ºC. See Note 1. PARAMETER POWER REQUIREMENTS CONDITIONS Supply Current IN+ = IN- + 100mV MIN TA = +25°C -40°C to +85°C TYP MAX UNITS 3.8 4.8 6.5 µA COMPARATOR Input Offset Voltage Input Leakage Current (IN-, IN+) Input Common-Mode Voltage Range Common-Mode Rejection Ratio Power-Supply Rejection Ratio Output Voltage Noise Response Time (High-to-Low Transition) Response Time (Low-to-High Transition) Output High Voltage Output Low Voltage VCM = 1.5V IN+ = IN- = 1.5V TA = +25°C -40°C to +85°C TA = +25°C -40°C to +85°C ±0.01 ±0.01 V- V- to (V+ – 1.3V) V+ = 2.5V to 11V 100Hz to 100kHz Overdrive = 10 mV Overdrive = 100 mV Overdrive = 10 mV TA = +25°C, 100pF Load Overdrive = 100 mV -40°C to +85°C; IOUT = 10mA -40°C to +85°C; IOUT = 0.8mA Dual Supply -40°C to +85°C; IOUT = 0.8mA 0.2 0.1 20 17 7 17 7 TA = +25°C, 100pF Load ±4.5 ±10 ±1 ±2.5 V+ – 1.3V 1 1 mV nA V mV/V mV/V μVRMS µs μs V+ – 0.4 GND + 0.4 V- + 0.4 V V V REFERENCE Reference Voltage Reference Line Regulation 2.5V ≤ (V+ - V-) ≤ 3V Source Current ∆VREF = 1% Sink Current ∆VREF = 1% TA = +25°C -40°C to +85°C TA = +25°C TA = +25°C -40°C to +85°C TA = +25°C -40°C to +85°C 1.170 1.158 20 6 10 4 1.182 0.25 25 15 1.194 1.206 V mV/V μA μA Output Voltage Noise 100Hz to 100kHz 100 μVRMS Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by device characterization, not production tested. Note 2: The TS9004 comparator operates below 2.5V. Refer to the “Low-Voltage Operation: V+ = 1.5V” section. Page 4 TS9004DS r1p0 RTFDS TS9004 TYPICAL PERFORMANCE CHARACTERISTICS V+ = 5V; V- = GND; TA = +25°C, unless otherwise noted. Output Voltage High vs Load Current Output Voltage Low vs Load Current 2.5 5 V+ = 5V V+ = 5V 4.5 2 4 V+ = 3V VOH - V VOL - V 1.5 1 3.5 3 2.5 V+ = 3V 0.5 2 0 1.5 0 4 8 12 16 20 24 0 28 LOAD CURRENT - mA 20 30 40 50 LOAD CURRENT - mA Reference Output Voltage vs Output Load Current Reference Voltage vs Temperature 1.22 1.190 V+ = 3V or 5V SINK 1.21 REFERENCE VOLTAGE - V 1.185 REFERENCE VOLTAGE - V 10 1.180 1.175 1.170 SOURCE 1.165 1.160 1.155 1.20 1.19 1.18 1.17 1.16 1.15 1.14 0 5 10 15 20 25 30 -40 -15 10 35 60 85 TEMPERATURE - ºC LOAD CURRENT - µA Supply Current vs Low Supply Voltages Supply Current vs Temperature 10 10 IN+ = IN- + 100mV 8 7 SUPPLY CURRENT - µA SUPPLY CURRENT - µA 9 V+ = 5V, V- = -5V 6 V+ = 5V, V- = 0V 5 4 V+ = 3V, V- = 0V 3 1 0.1 2 -40 -15 10 35 TEMPERATURE - ºC TS9004DS r1p0 60 85 1.5 2 2.5 SINGLE-SUPPLY VOLTAGE - V Page 5 RTFDS TS9004 TYPICAL PERFORMANCE CHARACTERISTICS V+ = 5V; V- = GND; TA = +25°C, unless otherwise noted. Transfer Function Hysteresis Control 80 5 60 OUTPUT HIGH 4 OUTPUT VOLTAGE - V IN+ - IN- - mV 40 20 0 NO CHANGE -20 -40 OUTPUT LOW -60 -80 3 2 1 0 0 10 20 30 50 40 -0.3 -0.2 OUTPUT VOLTAGE - V 5 20mV 3 2 1 50mV 10mV 0 100 0 0 -2 0 2 4 6 8 10 12 14 16 18 20 INPUT VOLTAGE - V OUTPUT VOLTAGE - V INPUT VOLTAGE - V Response Time For Various Input Overdrives (Low-to-High) 100mV 0 0.1 0.2 0.3 IN+ INPUT VOLTAGE - mV VREF - VHYST - mV 4 -0.1 Response Time For Various Input Overdrives (High-to-Low) 5 50mV 4 10mV 3 2 1 20mV 100mV 0 100 0 -2 0 2 4 6 8 10 12 14 16 18 RESPONSE TIME - µs RESPONSE TIME - µs Response Time at Low Supply Voltages (Low-to-High) Response Time vs Load Capacitance 18 100 V- = 0V RESPONSE TIME - µs RESPONSE TIME - µs 16 ±20mV OVERDRIVE ±100mV OVERDRIVE 10 14 12 VOHL 10 8 VOLH 6 4 1 2 1.5 2 SINGLE-SUPPLY VOLTAGE - V Page 6 2.5 0 20 40 60 80 100 LOAD CAPACITANCE - nF TS9004DS r1p0 RTFDS TS9004 TYPICAL PERFORMANCE CHARACTERISTICS V+ = 5V; V- = GND; TA = +25°C, unless otherwise noted. Short-Circuit Sink Current vs Supply Voltage Short-Circuit Source Current vs Supply Voltage 200 24 160 SINK CURRENT - mA SOURCE CURRENT - mA OUT CONNECTED TO V- 120 80 40 OUT CONNECTED TO V+ GND CONNECTED TO V- 20 16 12 8 0 1.5 2.5 3.5 5.5 4.5 1.5 3.63 5.75 7.88 10 TOTAL SUPPLY VOLTAGE - V TOTAL SUPPLY VOLTAGE - V Source and Sink Current at Low Supply Voltages CURRENT - mA 100 SOURCE CURRENT INTO 0.75V LOAD 10 SINK CURRENT AT VOUT = 0.4V 1 1.5 2 2.5 SINGLE-SUPPLY VOLTAGE - V TS9004DS r1p0 Page 7 RTFDS TS9004 PIN FUNCTIONS TS9004 SO-16 NAME 1 OUTB 2 OUTA 3 4 5 6 7 8 V+ INAINA+ INBINB+ REF 9 V- 10 11 12 13 14 INCINC+ INDIND+ GND 15 OUTD 16 OUTC FUNCTION Comparator B Output. Sinks and sources current. Swings from V+ to GND. Comparator A Output. Sinks and sources current. Swings from V+ to GND. Positive Supply Voltage Comparator A Inverting Input Comparator A Noninverting Input Comparator B Inverting Input Comparator B Noninverting Input 1.182V Reference Output with respect to V-. Negative Supply Voltage. Connect to ground for single-supply operation. Comparator C Inverting Input Comparator C Noninverting Input Comparator D Inverting Input Comparator D Noninverting Input Ground. Connect to V- for single-supply operation. Comparator D Output. Sinks and sources current. Swings from V+ to GND. Comparator C Output. Sinks and sources current. Swings from V+ to GND. BLOCK DIAGRAM Page 8 TS9004DS r1p0 RTFDS TS9004 THEORY OF OPERATION The TS9004 quad, low-voltage, micropower analog comparator provides excellent flexibility and performance while sourcing continuously up to 40mA of current. The TS9004 draws 8µA (max) for all 4 comparators, including the reference. It exhibits an input offset voltage of ±4.5mV, and has an on-board +1.182V ±0.75% voltage reference. To minimize glitches that can occur with parasitic feedback or a less than optimal board layout, the design of the TS9004 output stage is optimized to eliminate crowbar glitches as the output switches. Power-Supply and Input Signal Ranges The TS9004 can operate from a single supply voltage range of +2.5V to +11V, provides a wide common mode input voltage range of V- to V+ - 1.3V, and accept input signals ranging from Vto V+ - 1V. The inputs can accept an input as much as 300mV above and below the power supply rails without damage to the part. While the TS9004 is able to operate from a single supply voltage range, a GND pin is available that allows for a dual supply operation with a range of ±1.25V to ±5.5V. If a single supply operation is desired, the GND pin needs to be tied to V-. In a dual supply mode, the TS9004 is compatible with TTL/CMOS with a ±5V voltage. Low-Voltage Operation: V+ = 1.5V The TS9004 can operate down to a supply voltage of 2V; however, as the supply voltage reduces, the TS9004 supply current drops and the performance is degraded. When the supply voltage drops to 2.2V, the reference voltage will no longer function; however, the comparators will function down to a 1V supply voltage. Furthermore, the input voltage range is extended to just below 1V the positive supply rail. For applications with a sub-2.5V power supply, it is recommended to evaluate the circuit over the entire power supply range and temperature. APPLICATIONS INFORMATION Hysteresis As a result of circuit noise or unintended parasitic feedback, many analog comparators often break into oscillation within their linear region of operation especially when the applied differential input voltage approaches 0V (zero volt). Externally-introduced hysteresis is a well-established technique to TS9004DS r1p0 Comparator Output The TS9004 has a GND pin that allows the output to swing from V+ to GND while the V- pin can be set to a voltage below GND as long as the voltage difference between V+ and V- is within 11V. Having a different voltage on V- will not affect the output swing. For TTL applications, V+ can be set to +5V±10% and V- can be set anywhere between 0V and -5V±10%. Furthermore, the output design of the TS9004 can source and sink more than 40mA and 5mA, respectively, while simultaneously maintaining a quiescent current in the microampere range. If the power dissipation of the package is maintained within the max limit, the output can source pulses of 100mA of current with V+ set to +5V. In an effort to minimize external components needed to address power supply feedback, the TS9004 output does not produce crowbar switching current as the output switches. With a 10mV input overdrive, the propagation delay of the TS9004 is 17μs. Voltage Reference The TS9004 has an on-board 1.182V reference voltage with an accuracy of ±0.75%. The REF pin is able to source and sink 20μA and 10μA of current, respectively. The REF pin is referenced to V- and it should not be bypassed. Noise Considerations Noise can play a role in the overall performance of the TS9004. Despite having a large gain, if the input voltage is near or equal to the input offset voltage, the output will randomly switch HIGH and LOW. As a result, the TS9004 produces a peak-to-peak noise of about 0.3mVPP while the reference voltage produces a peak-to-peak noise of about 1mVPP. Furthermore, it is important to design a layout that minimizes capacitive coupling from a given output to the reference pin as crosstalk can add noise and as a result, degrade performance. stabilizing analog comparator behavior and requires external components. As shown in Figure 1, adding comparator hysteresis creates two trip points: VTHR (for the rising input voltage) and VTHF (for the falling input voltage). The hysteresis band (VHB) is defined as the voltage difference between the two trip points. When a comparator’s input voltages are equal, hysteresis effectively forces one comparator input to move quickly past the other input, moving the input Page 9 RTFDS TS9004 out of the region where oscillation occurs. Figure 1 illustrates the case in which an IN- input is a fixed voltage and an IN+ is varied. If the input signals 3. Calculating R1. R1 = R3 x V V+ = 10MΩ x 50mV 5V = 100 Ω In this example, a 100 Ω, 1% standard value resistor is selected for R1. Figure 1. Threshold Hysteresis Band were reversed, the figure would be the same with an inverted output. To add hysteresis to the TS9004, the circuit in Figure 2 is implemented and uses positive feedback along with two external resistors to set the desired hysteresis. The circuit consumes more current and it slows down the hysteresis effect 4. Choose the trip point for VIN rising (VTHR), which is the threshold voltage at which the comparator switches its output from low to high as VIN rises above the trip point. In this example, choose VTHR = 3V. 5. Calculating R2. 1 R2 = VT R VREF x R1 = 1 1 R1 R3 1 3 1 1 1.182V x 100 Ω 100 Ω 10MΩ = 5.44 Ω In this example, a 4.9 Ω, 1% standard value resistor is selected for R2. 6. The last step is to verify the trip voltages and hysteresis band using the standard resistance values: Figure 2. External Hysteresis due to the high impedance on the feedback. The following procedure explains the steps to design the circuit for a desired hysteresis: 1. Choosing R3. As the leakage current at the IN+ pin is less than 1nA, the current through R3 should be at least 100nA to minimize offset voltage errors caused by the input leakage current. For R3 = 11.8MΩ, the current through R3 is VREF/R3 at the trip point. In this case, a 10MΩ resistor is a good standard value for R3. 2. Next, the desired hysteresis band (VHB) is set. In this example, VHB is set to 50mV. Page 10 VT R = VREF x R1 x VT F = VT R – 1 1 1 + + R1 R2 R3 R1 x V+ R3 Board Layout and Bypassing While power-supply bypass capacitors are not typically required, it is good engineering practice to use 0.1μF bypass capacitors close to the device’s power supply pins when the power supply impedance is high, the power supply leads are long, or there is excessive noise on the power supply traces. To reduce stray capacitance, it is also good engineering practice to make signal trace lengths as short as possible. Also recommended are a ground plane and surface mount resistors and capacitors. TS9004DS r1p0 RTFDS TS9004 Bar-Graph Level Gauge Level Shifter A simple four-stage level detector is shown in Figure 3 using the TS9004. Due to its high output source capability, the TS9004 is perfect for driving LEDs. When all of the LEDs are on, the threshold voltage is given as VIN = (R1 + R2)/R1 volts. All other threshold voltages are scaled down accordingly by ¾, ½, and ¼ the threshold voltage. The current through the LEDs is limited by the output resistors. Figure 4 provides a simple way to shift from bipolar ±5V inputs to TTL signals by using the TS9004. To protect the comparator inputs, 10 Ω resistors are placed in series and do not have an effect on the performance of the circuit. Figure 3. Bar-Graph Level Gauge TS9004DS r1p0 Figure 4. Level Shifter: ±5V Input into CMOS output Page 11 RTFDS TS9004 PACKAGE OUTLINE DRAWING 16-Pin SOIC Package Outline Drawing (N.B., Drawings are not to scale) 10.01 Max 9.80 Min ( D) 0.79 Max 0.69 Min 1.27 TYP 0.508 REF 0.25 3.99 Max 3.81 Min (E) 6.20 Max 5.80Min GAUGE PLANE 7' TYP ALL SIDE 0' - 8' 0.863 Max 0.406 Min PIN 1 ID MARK 1.75 Max 0.51 Max 0.33 Min 3.89 Max 3.73 Min 0.48 Max 0.28 Min 45' Angle 3.99 Max 3.81 Min 0.25 Max O.10 Min 0.10 Max DETAIL ‘A’ 0.25 Max 0.19 Min DETAIL ‘A’ NOTE: 1. “D” DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER SIDE. 2. “E” DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSIONS. INTER-LEAD FLASH AND PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.25 mm PER SIDE. 3. CONTROLLING DIMENSIONS IN MILIMETERS AND ANGLES IN DEGREES. 4. THIS PART IS COMPLIANT WITH JEDEC SPECIFICATION MS-012 AB 5. LEAD SPAN/STAND OFF HEIGHT/COPLANARITY ARE CONSIDERED AS SPECIAL CHARACTERISTIC. Information furnished by Touchstone Semiconductor is believed to be accurate and reliable. However, Touchstone Semiconductor does not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result from its use, and all information provided by Touchstone Semiconductor and its suppliers is provided on an AS IS basis, WITHOUT WARRANTY OF ANY KIND. Touchstone Semiconductor reserves the right to change product specifications and product descriptions at any time without any advance notice. No license is granted by implication or otherwise under any patent or patent rights of Touchstone Semiconductor. Touchstone Semiconductor assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using Touchstone Semiconductor components. To minimize the risk associated with customer products and applications, customers should provide adequate design and operating safeguards. Trademarks and registered trademarks are the property of their respective owners. Page 12 Touchstone Semiconductor, Inc. 630 Alder Drive, Milpitas, CA 95035 +1 (408) 215 - 1220 ▪ www.touchstonesemi.com TS9004DS r1p0 RTFDS