TC1101 REV6_20070502 Low Noise and Medium Power GaAs FETs FEATURES Low Noise Figure: NF = 0.5 dB Typical at 12 GHz PHOTO ENLARGEMENT High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability Tight Vp ranges control High RF input power handling capability 100 % DC Tested DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions NF Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz Ga Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz P1dB MIN Output Power at 1dB Gain Compression point, f = 12GHz VDS = 6 V, IDS = 25 mA TYP MAX 0.5 0.7 UNIT dB 10 12 dB 17.5 18.5 dBm GL Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 25 mA 15 dB IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 14 48 mA gm Transconductance at VDS = 2 V, VGS = 0 V 55 mS VP Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA BVDGO Drain-Gate Breakdown Voltage at IDGO =0.08 mA Rth 9 Thermal Resistance -1.0* Volts 12 Volts 225 °C/W Note: * For the tight control of the pinch-off voltage . TC1101’s are divided into 3 groups: (1) TC1101P0710 : Vp = -0.7V to -1.0V (2) TC1101P0811 : Vp = -0.8V to -1.1V (3) TC1101P0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 2 V, IDS = 10 mA Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 7.0 V -3.0 V IDSS 160 µA 18 dBm 250 mW 175 °C - 65 °C to +175 °C Frequency (GHz) 2 4 6 8 10 12 14 16 18 NFopt (dB) 0.38 0.40 0.42 0.45 0.50 0.55 0.64 0.78 0.95 GA (dB) 19.8 17.5 15.6 13.9 13.1 12.4 11.7 11.1 10.6 Γopt MAG ANG 0.99 4 0.90 9 0.82 18 0.76 29 0.69 43 0.63 55 0.56 65 0.45 76 0.34 90 Rn/50 0.48 0.40 0.37 0.34 0.32 0.30 0.28 0.26 0.24 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/5 TC1101 REV6_20070502 CHIP DIMENSIONS 290± 12 D 250± 12 S G S Units: Micrometers Gate Pad: 55 x 50 Chip Thickness: 100 Drain Pad: 55 x 50 Source Pad: 55 x 60 TYPICAL SCATTERING PARAMETERS 6 . 0 8 . 0 0 . 1 0 2. 4. 0 0 3. 0 4. 0 5. S11 2.0 0 2 . 0 4 . 0 6 . 0 8 0 . . 0 1 Swp Max 18GHz 0 . 2 0 00 . .. 3 45 0.0 1 0 . 0 1 (TA=25 °C) VDS = 2 V, IDS = 10 mA Mag Max 0.15 0 9 1 2 0 1 0 5 5 7 0 6 Swp Max 18 GHz 45 13 5 30 15 0 15 165 0 -180 0.012 -0. 0. 0. 540. 3- .4 -0 6 . 0 - 8 . 0 - 0 . 1 - 0. 2- Swp Min 2GHz -15 -165 S12 -3 0 50 -1 35 -1 0.075 Per Div -4 5 0 2 1 - 5 0 1 - 9 0 7 5 60 Swp Min 2 GHz TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/5 TC1101 REV6_20070502 Mag Max 5 0 9 1 2 0 5 7 1 0 5 Swp Max 18 GHz 0 6 6 . 0 45 13 5 0 . 1 8 . 0 Swp Max 18GHz 0 2. 4. 0 0 3. 0 4. 0 5. S22 30 15 0 2.0 15 165 0 2 . 0 0 4 . 0 6 . 0 8 0 . . 0 1 0 . 2 0 00 . .. 3 45 0.0 1 0 . 0 1 -180 -15 -1 65 0.01- S21 -3 0 50 -1 35 -1 1 Per Div 2 -0. -4 5 0 2 1 - 5 0 1 - 9 0 6 0 7 5 .4 -0 6 . 0 - Swp Min 2 GHz FREQUENCY S11 S21 (GHz) MAG ANG MAG ANG 2 0.9879 -20.21 4.3485 162.66 3 0.9740 -29.96 4.2452 154.28 4 0.9564 -39.31 4.1126 146.20 5 0.9364 -48.20 3.9594 138.48 6 0.9152 -56.56 3.7943 131.15 7 0.8939 -64.40 3.6242 124.22 8 0.8732 -71.72 3.4546 117.66 9 0.8536 -78.52 3.2894 111.45 10 0.8354 -84.84 3.1312 105.57 11 0.8188 -90.72 2.9813 99.99 12 0.8037 -96.18 2.8406 94.68 13 0.7901 -101.25 2.7092 89.60 14 0.7780 -105.98 2.5868 84.74 15 0.7671 -110.39 2.4731 80.07 16 0.7575 -114.51 2.3676 75.57 17 0.7491 -118.37 2.2697 71.21 18 0.7416 -121.99 2.1788 66.99 * The data does not include gate, drain and source bond wires. TYPICAL SCATTERING PARAMETERS 6 . 0 8 . 0 0 . 1 .0 2 4. 0 Swp Max 18GHz S11 0 2 . 0 4 . 0 6 . 0 8 0 . . 0 1 0 00 . .. 3 45 0. 2- 0 . 1 - Swp Min 2GHz S22 ANG 77.08 70.91 65.04 59.53 54.40 49.66 45.29 41.27 37.57 34.16 31.00 28.08 25.36 22.82 20.44 18.20 16.08 MAG 0.7367 0.7235 0.7068 0.6877 0.6676 0.6472 0.6276 0.6090 0.5919 0.5764 0.5627 0.5506 0.5402 0.5313 0.5239 0.5179 0.5132 ANG -11.76 -17.37 -22.68 -27.66 -32.28 -36.54 -40.46 -44.06 -47.37 -50.43 -53.28 -55.93 -58.41 -60.76 -62.99 -65.12 -67.16 (TA=25 °C) VDS = 6 V, IDS = 25 mA Mag Max 0.1 0 9 1 2 0 1 0 5 5 7 0 6 .0 1 00 . 0 1 Swp Max 18 GHz 45 13 5 0 4. 0 5. 0 . 2 8 . 0 - S12 MAG 0.0296 0.0434 0.0560 0.0674 0.0774 0.0861 0.0937 0.1002 0.1058 0.1106 0.1148 0.1183 0.1214 0.1241 0.1264 0.1284 0.1302 0 3. 2.0 0. 0. 540. 3- 30 15 0 15 165 0 -180 0.012 -0. 0. 0. 540. 3- .4 -0 6 . 0 - 8 . 0 - 0 . 1 - -15 -165 S12 35 -1 0. 2- Swp Min 2GHz -3 0 50 -1 0.01 Per Div -4 5 0 2 1 - 5 0 1 - 9 0 7 5 6 0 Swp Min 2 GHz TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3/5 TC1101 REV6_20070502 Mag Max 6 0 9 1 2 0 5 7 1 0 5 0 6 Swp Max 18 GHz 6 . 0 45 13 5 0 . 1 8 . 0 0 2. 4. 0 0 3. 0 4. 0 5. S22 30 15 0 2.0 15 Swp Max 18GHz 165 0 2 . 0 0 4 . 0 6 . 0 8 0 . . 0 1 0 . 2 0 00 . .. 3 45 0.0 1 0 . 0 1 -180 0.01- -15 -1 65 S21 -3 0 50 -1 35 -1 2 Per Div -4 5 0 2 1 - 5 0 1 - 9 0 7 5 6 0 2 -0. .4 -0 6 . 0 - Swp Min 2 GHz FREQUENCY S11 S21 (GHz) MAG ANG MAG ANG 2 0.9861 -22.03 5.2729 161.97 3 0.9704 -32.59 5.1264 153.31 4 0.9507 -42.66 4.9406 145.03 5 0.9288 -52.16 4.7291 137.18 6 0.9059 -61.05 4.5045 129.78 7 0.8834 -69.32 4.2765 122.83 8 0.8618 -76.97 4.0524 116.31 9 0.8418 -84.05 3.8370 110.19 10 0.8234 -90.59 3.6330 104.41 11 0.8068 -96.63 3.4418 98.96 12 0.7919 -102.23 3.2639 93.79 13 0.7786 -107.40 3.0990 88.86 14 0.7668 -112.21 2.9466 84.16 15 0.7564 -116.69 2.8058 79.65 16 0.7471 -120.86 2.6758 75.31 17 0.7389 -124.76 2.5557 71.12 18 0.7316 -128.41 2.4446 67.06 *The data does not include gate, drain and source bond wires. 0. 0. 540. 38 . 0 - 0. 20 . 1 - Swp Min 2GHz S12 MAG 0.0218 0.0318 0.0408 0.0488 0.0558 0.0618 0.0669 0.0712 0.0749 0.0781 0.0807 0.0830 0.0850 0.0867 0.0882 0.0895 0.0906 S22 ANG 76.68 70.37 64.44 58.94 53.89 49.28 45.10 41.30 37.85 34.72 31.86 29.24 26.83 24.60 22.54 20.62 18.82 MAG 0.7718 0.7586 0.7422 0.7239 0.7050 0.6865 0.6690 0.6530 0.6386 0.6260 0.6150 0.6057 0.5978 0.5913 0.5861 0.5821 0.5790 ANG -10.24 -15.08 -19.62 -23.82 -27.69 -31.23 -34.49 -37.49 -40.28 -42.90 -45.37 -47.73 -49.99 -52.18 -54.32 -56.41 -58.46 SMALL SIGNAL MODEL, VDS = 2 V, IDS = 10 mA TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4/5 TC1101 REV6_20070502 SCHEMATI Lg PARAMETERS Cgd Rg Rd 0.047 nH Rs 1.290 Ohm Rg 1.460 Ohm Ls 0.001 nH Cgs 0.207 pF Cds 0.068 pF 3.680 Ohm Rds 321.5 Ohm Cgd 0.027 pF Rd 1.525 Ohm Gm 54.80 mS Ld 0.038 nH T 3.340 psec Gm Cgs Cds Ri Lg Ld Rds T Ri Rs Ls SMALL SIGNAL MODEL, VDS = 6 V, IDS = 25 mA SCHEMATI Lg PARAMETERS Cgd Rg Rd Gm Cgs Cds Ri Ld Rds T Rs Ls Lg 0.047 nH Rs 1.250 Ohm Rg 1.460 Ohm Ls 0.001 nH Cgs 0.254 pF Cds 0.067 pF Ri 5.910 Ohm Rds 377.8 Ohm Cgd 0.019 pF Rd 1.525 Ohm Gm 66.00 mS Ld 0.038 nH T 3.640 psec CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 5/5