TC1404N REV2_20070502 0.5W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 0.5W Typical Power at 12 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 11 dB Typical at 12 GHz ! High Linearity: IP3 = 37 dBm Typical at 12 GHz ! High Power Added Efficiency: Nominal PAE of 40 % at 12 GHz ! Non-Via Hole Source for Single-Bias Application ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 13.5 V ! Lg = 0.25 µm, Wg = 1.2 mm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1404N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed without via-holes for single-bias applications. The short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical applications include commercial and military high performance power amplifiers ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions P1dB Output Power at 1dB Gain Compression Point , f GL Linear Power Gain, f = 12GHz VDS = 8 V, IDS = 120 mA TYP 26.5 MAX UNIT 27 dBm = 12GHz VDS = 8 V, IDS = 120 mA 11 dB rd 37 dBm IP3 Intercept Point of the 3 -order Intermodulation, f = 12GHz VDS =8V, IDS = 120 mA, *PSCL = 14 dBm PAE Power Added Efficiency at 1dB Compression Power, f IDSS gm VP Pinch-off Voltage at VDS = 2 V, ID = 2.4 mA = 12GHz 40 % Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 360 mA Transconductance at VDS = 2 V, VGS = 0 V 260 mS -1.7 Volts 15 Volts 30 °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO =0.6 mA Rth MIN Thermal Resistance 13.5 Note: * PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/3 TC1404N REV2_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 26 dBm 1.9 W 175 °C - 65 °C to +175 °C CHIP DIMENSIONS Units : Micrometer Gate Pad : 45*45 Chip Thickness : 76.2 Drain Pad : 55*55 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/3 TC1404N REV2_20070502 SMALL SIGNAL MODEL, VDS = 8 V, IDS = 120 mA SCHEMATI Lg PARAMETERS Cgd Rg Rd Gm Cgs Cds Ri Ld Lg 0.02 nH Rs Rg 0.97 Ohm Ls 0.005 nH 2.652 pF Cds 0.274 pF 1.246 Ohm Rds 55.8 Ohm Cgd 0.144 pF Rd 0.65 Ohm Gm 574.6 mS Ld 0.02 nH Cgs Rds Ri T Rs T 0.8 Ohm 3.9 psec Ls LARGE SIGNAL MODEL, VDS = 8 V, IDS = 120 mA SCHEMATI Lg Rg TOM2 MODEL PARAMETERS Cgd Rd Rid Cgs Rdb Id Ris Cds Cbs Rs Ls Ld VTO ALPHA BETA GAMMA DELTA Q NG ND TAU RG RD RS IS N VBI VDELTA -1.62 14.13 0.354 0.0228 0.1565 0.88 0.1 0.01 3.9 0.97 0.65 0.8 1E-11 1 1 0.2 V VMAX CGD CGS CDS RIS RID VBR RDB ps CBS Ohm TNOM Ohm LS Ohm LG mA LD AFAC V NFING V 0.5 0.144 2.652 0.274 2.005 0.0001 13.5 119.667 2.5 25 0.005 0.02 0.02 1 1 V pF pF pF Ohm Ohm V Ohm pF °C nH nH nH CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3/3