TGA2527-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 41 dBm Power: 31.5 dBm Psat, 30 dBm P1dB Gain: 25 dB Return Loss: 10 dB NF: 7.5 dB Integrated Power Detector Bias: Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical Package Dimensions: 5.0 x 5.0 x 0.85 mm 24 The TriQuint TGA2527-SM is a Ku-Band Packaged Power Amplifier. The TGA2527-SM operates from 12.5 to 15.5 GHz and is designed using TriQuint’s power pHEMT production process. The TGA2527-SM typically provides 41dBm of TOI at 20dBm Pout/Tone, 30 dBm of output power at 1dB gain compression, and the small signal gain is 25 dB. The TGA2527-SM is available in a low-cost, surface mount 24 lead 5x5 QFN package and is ideally suited for Point-to-Point Radio, and Ku-Band VSAT Ground Terminal. 22 21 20 19 1 18 2 17 3 16 4 15 5 14 6 13 7 General Description 23 8 9 10 11 12 Pin Configuration Pin # Symbol 1, 2, 3, 5, 6, 9, 12, 13, 14, 15, 17 4 7, 8, 23, 24 16 10, 11, 20, 21 18 19 22 N/C RF IN Vg RF OUT Vd Vref Vdet GND Lead-free and RoHS compliant. Evaluation Boards are available upon request. Ordering Information Part No. ECCN TGA2527-SM 3A001.b.2.c Description Ku-band Power Amplifier Standard T/R size = 500 pieces on a 7” reel. Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. - 1 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Drain Voltage,Vd Gate Voltage,Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, 50Ω,T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature +8 V -3 to 0 V 1.12 A -5.5 to 88 mA 9W 24 dBm 200 oC 260 oC -40 to 150 oC Vd Id Id_drive (Under RF Drive) Vg Min Typical Max Units 6 650 V mA 850 mA -0.55 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical. Parameter Min Operational Frequency Range Gain Input Return Loss Output Return Loss Output Power @ Saturation Output Power @ 1 dB Gain Compression Output TOI @ Pout/Tone = 20 dBm Noise Figure Gain Temperature Coefficient Power Temperature Coefficient 12.5 Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. Typical 25 -10 -10 31.5 30 41 7.5 -0.033 -0.005 - 2 of 13 - Max Units 15.5 GHz dB dB dB dBm dBm dBm dB dB/°C dBm/°C Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, θJC, measured to back of package Tbase = 85 °C Tbase = 85 °C, Vd = 6 V, Id = 650 mA, Pdiss = 3.9 W Tbase = 85 °C, Vd = 6 V, Id = 850 mA, Pout = 32 dBm, Pdiss = 3.5 W θJC = 11.5 °C/W Tch = 130 °C Tm = 5.9 E+6 Hours Tch = 125 °C Tm = 9.5 E+6 Hours Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm, (Hours) 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET3 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature, Tch, (°C) Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. - 3 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier S-Parameters vs. Frequency S-Parameters vs. Frequency Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C 28 0 5 26 5 24 10 22 15 20 20 10 24 15 23 20 22 25 Gain IRL ORL 21 20 12 12.5 13 13.5 14 14.5 15 15.5 18 25 Gain IRL ORL 16 30 14 35 12 16 11 12 Power vs. Frequency Power (dBm), Gain (dB) Output Power (dBm) 31 30 Psat P1dB 27 26 25 13 13.5 14 14.5 15 16 17 18 Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C 32 12.5 14 Power, Gain, Id vs. Input Power @ 14 GHz 33 12 13 Frequency (GHz) Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C 28 35 40 10 Frequency (GHz) 29 30 15 15.5 34 32 30 28 26 24 22 20 18 16 14 12 16 860 840 820 800 780 760 740 720 700 680 660 640 Power Gain Id -10 -8 -6 -4 -2 0 Frequency (GHz) 2 4 6 Id (mA) Gain (dB) 25 Gain (dB) 0 26 Return Loss (dB) 27 Return Loss (dB) Typical Performance 8 10 12 14 Input Power (dBm) Power Added Efficiency vs. Frequency Power Detector vs. Pout vs. Frequency Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C 32 10 30 1 26 Vdiff (V) PAE (%) 28 24 PAE @ Psat PAE @ P1dB 22 20 12.7GHz 13.3GHz 14.4GHz 15.4GHz 0.1 18 16 0.01 12 12.5 13 13.5 14 14.5 15 15.5 16 -5 Frequency (GHz) Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. 0 5 10 15 20 25 30 35 Output Power (dBm) - 4 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier TOI vs. Frequency vs. Pout/Tone IM3 vs. Pout/Tone vs. Frequency Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C 42 -20 41 -25 -30 40 Pout/Tone = 21dBm Pout/Tone = 20dBm Pout/Tone = 19dBm 39 38 IM3 (dBc) Output TOI (dBm) Typical Performance (cont.) 37 -35 -40 -45 12.7GHz 13.3GHz 14.4GHz 15.4GHz -50 36 -55 35 -60 12 12.5 13 13.5 14 14.5 15 15.5 16 12 13 14 15 16 17 18 19 20 21 22 23 24 Frequency (GHz) Pout/Tone (dBm) IM5 vs. Pout/Tone vs. Frequency Noise Figure vs. Frequency Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical, +25 0C -20 Noise Figure (dB) -30 IM5 (dBc) -40 -50 -60 -70 12.7GHz 13.3GHz 14.4GHz 15.4GHz -80 -90 -100 10 9 8 7 6 5 4 3 2 1 0 12 13 14 15 16 17 18 19 20 21 22 23 24 12 13 15 16 Frequency (GHz) Gain vs. Frequency vs. Bias Psat vs. Frequency vs. Bias Vd = 5 - 6 V, Id = 600 - 700 mA, +25 0C Vd = 5 - 6 V, Id = 600 - 700 mA, +25 0C 27 33 26 32 25 31 Psat (dBm) Gain dB Pout/Tone (dBm) 14 24 23 6V 700mA 6V 650mA 6V 600mA 5V 650mA 22 21 30 6V 700mA 6V 650mA 6V 600mA 5V 650mA 29 28 27 26 20 25 12 12.5 13 13.5 14 14.5 15 15.5 16 12 Frequency (GHz) Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) - 5 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Typical Performance (cont.) TOI vs. Frequency vs. Bias Vd = 5 - 6 V, Id = 650 - 700 mA, +25 0C Vd = 5 - 6 V, Id = 600 - 700 mA, +25 0C OTOI @ 20dBm Pout/Tone (dBm) P1dB vs. Frequency vs. Bias 33 P1dB (dBm) 32 31 30 29 28 6V 700mA 6V 650mA 6V 600mA 5V 650mA 27 26 25 12 12.5 13 13.5 14 14.5 15 15.5 42 41 40 39 6V 700mA 6V 650mA 6V 600mA 5V 650mA 38 37 36 35 16 12 12.5 13 Frequency (GHz) 15 15.5 16 Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical 33 32 31 Psat (dBm) Gain (dB) 14.5 Psat vs. Frequency vs. Temperature Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical -40C +25C +85C 30 29 -40C +25C +85C 28 27 26 25 12 12.5 13 13.5 14 14.5 15 15.5 16 12 12.5 13 Frequency (GHz) OTOI @ 20dBm Pout/Tone (dBm) 33 32 31 30 29 -40C +25C +85C 27 26 25 12 12.5 13 13.5 14 14.5 15 15.5 16 14.5 15 15.5 16 Preliminary Data Sheet: Rev - 11/21/11 Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical 43 42 41 40 39 38 -40C +25C +85C 37 36 12 Frequency (GHz) © 2011 TriQuint Semiconductor, Inc. 14 TOI vs. Frequency vs. Temperature Vd = 6 V, Id = 650 mA, Vg = -0.55 V Typical 28 13.5 Frequency (GHz) P1dB vs. Frequency vs. Temperature P1dB (dBm) 14 Frequency (GHz) Gain vs. Frequency vs. Temperature 28 27 26 25 24 23 22 21 20 19 18 13.5 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) - 6 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Application Circuit Vd = 6 V Id = 650 mA C1 100 pF C3 1 uF R1 Vdet 24 23 22 21 20 100K Ohms 19 + _ Vdiff R2 18 1 Vref 2527 YYWW XXXX 2 3 J1 RF IN 4 5 6 7 8 9 10 11 6V 100K Ohms 17 16 J2 RF OUT 15 14 13 12 Vg = -0.55V Typical C2 100 pF C4 1 uF Vg and Vd can be biased from either side, and the non-biased side can be left open. (Vg are either pins 7 and 8 or pins 23 and 24, Vd are either pins 10 and 11 or pins 20 and 21) Bias-up Procedure Bias-down Procedure Vg set to -1.5 V Vd set to +6 V Adjust Vg more positive until quiescent Id is 650mA. This will be ~ Vg = -0.55 V Apply RF signal to RF Input Turn off RF supply Reduce Vg to -1.5V. Ensure Id ~ 0 mA Turn Vd to 0 V Turn Vg to 0 V The TGA2527-SM will be marked with the “2527” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an autogenerated number. Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. - 7 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Pin Description 24 23 21 22 20 19 1 18 2 17 16 3 25 4 15 5 14 6 13 7 8 Pin 1, 2, 3, 5, 6, 13, 14, 15, 17 4 9 10 11 12 Symbol Description N/C No internal connection; must be grounded on PCB RF IN Input, matched to 50 ohms Gate voltage. ESD protection included; Bias network is required; can be biased from either side (pins 7 and 8 or pins 23 and 24), and non-biased side can be left opened; see Application Circuit on page 7 as an example. No internal connection. Can be grounded on PCB or left open Drain voltage. Bias network is required; can be biased from either side (pins 10 and 11 or pins 20 and 21), and non-biased side can be left opened; see Application Circuit on page 7 as an example. Output, matched to 50 ohms Reference diode output voltage. Detector diode output voltage. Varies with RF output power. Internal grounding; can be grounded on PCB or left open Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 11 for suggested footprint. 7, 8, 23, 24 Vg 9, 12 N/C 10, 11, 20, 21 Vd 16 18 19 22 RF OUT Vref Vdet GND 25 GND Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. - 8 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Applications Information PC Board Layout Top RF layer is 0.008” thick Rogers RO4003, єr = 3.38. Metal layers are 1-oz copper. Microstrip 50 Ω line detail: width = 0.0175”. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, refer to the TGA2527-SM Product Information page. Vd Vref Vd Vdet C3 R1 R2 C1 C2 Vg Vg C4 GND GND Bill of Material Ref Des Value Description Manufacturer C1, C2 C3, C4 R1, R2 100 pF 1 uF 100K Ohms Cap, 0402, 50 V, 5%, COG Cap, 0603, 25 V, 10%, X5R Res, 0603, 1/16W, 5%, SMD various various various Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. - 9 of 13 - Part Number Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Mechanical Information Package Information and Dimensions All dimensions are in millimeters. This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is 100% matte Sn. It is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering processes. Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. - 10 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Mechanical Information (cont.) Mounting Configuration All dimensions are in millimeters (inches). Notes: 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. 2. Ground / thermal vias are critical for the proper performance of this device. Vias have a final plated thru diameter of .40 mm (.016”). .675 .675 Tape and Reel Information Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes” section. Standard T/R size = 500 pieces on a 7 x 0.5” reel. CARRIER AND COVER TAPE DIMENSIONS Part Feature Cavity Length Width Depth Pitch Cavity to Perforation Length Direction Cavity to Perforation Width Direction Width Width Distance Between Centerline Cover Tape Carrier Tape Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. - 11 of 13 - Symbol Size (in) Size (mm) A0 B0 K0 P1 0.207 0.207 0.043 0.315 5.25 5.25 1.10 8.00 P2 0.079 2.00 F 0.217 5.50 C W 0.374 0.472 9.5 12.0 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260°C ESD Rating: Value: Test: Standard: This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). TBD Passes ≥ TBD min Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating Level MSL1 at +260 °C convection reflow The part is rated Moisture Sensitivity Level MSL1 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free ECCN US Department of Commerce 3A001.b.2.c Recommended Soldering Temperature Profile Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. - 12 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGA2527-SM Ku-Band Power Amplifier Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Data Sheet: Rev - 11/21/11 © 2011 TriQuint Semiconductor, Inc. - 13 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®