TGA2706-SM 2 Watt C-Band Packaged Power Amplifier Key Features • • • • • • • Measured Performance Frequency Range: 5.5 – 8.5 GHz Power: 34 dBm Psat, 32 dBm P1dB Gain: 31 dB TOI: 42 dBm NF: 7 dB Bias: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical Package Dimensions: 5 x 5 x 0.85 mm Primary Applications Bias conditions: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical • • Point-to-Point Radio Communications Product Description The TriQuint TGA2706-SM is a packaged 2 Watt Power Amplifier for C-band applications. The part is designed using TriQuint’s proven standard 0.5um E/D pHEMT production process. The TGA2706-SM provides a nominal 34 dBm of output power at an input power level of 12 dBm with a small signal gain of 31 dB. Nominal TOI is 42 dBm and noise figure is 7 dB. The TGA2706-SM is a QFN 5x5 mm surface mount package. It is ideally suited for low cost emerging markets such as point to point radio and communications. Lead-Free & RoHS compliant. Evaluation boards are available upon request. ` Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 1 TGA2706-SM Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Parameter Value Drain to Gate Voltage 16 V Vd Drain Voltage 13 V Vg Gate Voltage Range Id Drain Current Ig Gate Current Range Pin Notes 2/ -0.65 to +2 V 2.7 A 2/ -16 to 120mA Input Continuous Wave Power 26 dBm 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed Pd (as listed in “Thermal Information”). Table II Recommended Operating Conditions Symbol Drain Voltage 6V Idq Drain Current 1.26 A Drain Current under RF Drive 1.7 A Vg ` Value Vd Id_Drive 1/ Parameter 1/ Gate Voltage +0.6 V See assembly diagram for bias instructions. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 2 TGA2706-SM Table III RF Characterization Table Bias: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical SYMBOL ` PARAMETER TEST CONDITIONS MIN NOMINAL MAX UNITS 27 31 dB Gain Small Signal Gain F = 5.5 – 8.5 GHz IRL Input Return Loss F = 5.5 – 8.5 GHz -12 dB ORL Output Return Loss F = 5.5 – 8.5 GHz -15 dB Psat Saturated Output Power F = 5.5 – 8.5 GHz 34 dBm P1dB Output Power @ 1dB Compression F = 5.5 – 8.5 GHz 32 dBm TOI Output TOI F = 5.5 GHz F = 5.9 – 8.5 GHz 41 42 dBm NF Noise Figure F = 5.5 – 8.5 GHz 7 dB Gain Temperature Coefficient F = 5.5 – 8.5 GHz -0.03 dB/°C Power Temperature Coefficient F = 5.5 – 8.5 GHz -0.015 dBm/°C 32 39 40 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 3 TGA2706-SM Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Maximum Power Dissipation Tbaseplate = 85 °C Pd = 15 W Tchannel = 200 °C Thermal Resistance, θjc Vd = 6 V Id = 1.26 A Pd = 7.56 W Tbaseplate = 85 ºC θjc = 7.7 °C/W Tchannel = 143 °C Tm = 1.3E+8 Hrs Thermal Resistance, θjc Under RF Drive Vd = 6 V Id = 1.7 A Pout = 34 dBm Pd = 7.7 W Tbaseplate = 85 ºC θjc = 7.7 °C/W Tchannel = 144 °C Tm = 1.1E+8 Hrs Mounting Temperature 30 Seconds Storage Temperature 320 °C -65 to 150 °C Median Lifetime (Tm) vs. Channel Temperature ` TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 4 Measured Data TGA2706-SM Bias conditions: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical ` TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 5 Measured Data TGA2706-SM Bias conditions: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical ` TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 6 Measured Data TGA2706-SM Bias conditions: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical ` TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 7 Measured Data TGA2706-SM Bias conditions: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical ` TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 8 Measured Data TGA2706-SM Bias conditions: Vd = 6 V, Id = 1.26 A, Vg = +0.6 V Typical ` TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 9 Measured Data TGA2706-SM Bias conditions: Varies ` TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 10 Measured Data TGA2706-SM Bias conditions: Varies ` TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 11 TGA2706-SM Electrical Schematic Vd1_Top Vd1_Bottom 21 Vd3_Bottom Vd3_Top 9 20 11 TGA2706-SM RF Input 3 16 24 7 RF Output 10 Vg1_Top Vg1_Bottom Vg3 Bias Procedures ` Bias-up Procedure Bias-down Procedure Vg set to 0 V Turn off RF supply Vd_set to +6 V Reduce Vg to 0 V. Ensure Id ~ 0 mA Adjust Vg more positive until Idq is 1.26 A. This will be ~ Vg = +0.6 V Turn Vd to 0 V TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 12 TGA2706-SM Package Pinout Pin #1 Dot Pin Description 1, 2, 4, 5, 6, 13, 14, 15, 17, 18 N/C See Note 1 8, 12, 22, 23 N/C See Note 2 3 RF Input 7, 24 Vg1 9, 21 Vd1 10 Vg3 11, 20 Vd3 16 RF Output 19 See Note 1 25 Ground 1/ No internal connection; must be grounded on PCB 2/ No internal connection; may be ground on PCB or left open 3/ Internally connected, but not for use in application. Recommended to leave open. ` TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E 13 Mechanical Drawing Units: Millimeters TGA2706-SM GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. ` 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E TGA2706-SM Recommended Assembly Board Vg1 Vd1 Vg Vdet Vd3 C1 C2 +0.6V Typical 6V 1.26A Vd C3 C4 RFout RFin C5 C6 C8 C7 Vg1 Vd3 Vd1 Vg3 Part Description C1, C2, C7, C8 1 uF Capacitor (1206) C3, C4, C5, C6 0.01 uF Capacitor (0603) Board is 10mil thick RO4350 with 0.5oz copper cladding. Board is mounted on metal block and adequate heatsinking with fan is required. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. ` 15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E TGA2706-SM Assembly Notes Recommended Surface Mount Package Assembly • Proper ESD precautions must be followed while handling packages. • Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. • TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. • Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. • Clean the assembly with alcohol. ESD and MSL Information ESD: Class 0, Pass 200V. MSL: Level 3. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 °C/sec 3 °C/sec Activation Time and Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C Time above Melting Point 60 – 150 sec 60 – 150 sec Max Peak Temperature 240 °C 260 °C Time within 5 °C of Peak Temperature 10 – 20 sec 10 – 20 sec Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec Ordering Information Part Package Style TGA2706-SM QFN 5x5 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. ` 16 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev E