TGS2353 DC – 18 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 18 GHz Input Power: up to 10 W Insertion Loss: < 1.5 dB Isolation: -30 dB typical Switching Speed: < 35 ns Control Voltages: 0 V/-40 V from either side of MMIC Dimensions: 1.15 x 1.65 x 0.1 mm General Description Vc2 J1 RF In Vc1 2, 7 4 J2 RF Out1 5 J3 RF Out2 1 3, 6 Bond Pad Configuration The TriQuint TGS2353 is a Single-Pole, Double-Throw (SPDT) Switch. The TGS2353 operates from DC to 18 GHz and is designed using TriQuint’s 0.25um GaN on SiC production process. Bond Pad # Symbol 1 2, 7 3, 6 4 5 RF In Vc2 Vc1 RF Out1 RF Out2 The TGS2353 typically provides up to 10 W input power handling at control voltages of 0/-40 V. This switch maintains low insertion loss < 1.5 dB, and high isolation -30 dB typical. The TGS2353 is ideally suited for High Power Switching application. Lead-free and RoHS compliant Ordering Information Part No. TGS2353 Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. - 1 of 10 - ECCN EAR99 Description DC – 18 GHz High Power SPDT Switch Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2353 DC – 18 GHz High Power SPDT Switch Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Control Voltage, Vc Control Current, Ic Power Dissipation, Pdiss RF Input Power, CW, 50Ω,T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature - 50 V -1 to 5.8 mA 3.5 W 41 dBm 275 oC Vc1 Vc2 Ic1 / Ic2 o 320 C Min Typical -40 / 0 0 / -40 -0.3 to 0.1 Max Units V V mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. -40 to 150 oC Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25ºC, Vc1 = -40/0 V, Vc2 = 0/-40 V, see Function Table at Application Circuit on page 5. Parameter Min Operational Frequency Range Control Current (Ic1/ Ic2) Insertion Loss (On-State) Input Return Loss – On-State (Common Port RL) Output Return Loss – On-State (Switched Port RL) Isolation (Off-State) Output Return Loss – Off-Sate (Isolated Port RL) Input Power 1/ Insertion Loss Temperature Coefficient Switching Speed - On Switching Speed - Off DC -0.5 Typical < 1.5 15 15 -30 2.5 40 -0.003 31 18 Max Units 18 0.1 GHz mA dB dB dB dB dB dBm dB/°C ns ns 1/ The Input Power will be reduced if < 10 MHz. Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. - 2 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2353 DC – 18 GHz High Power SPDT Switch Specifications (cont.) Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, θJC, measured to back of carrier (die mounted to a 20 mil CuMo carrier using 1.5 mil 80/20 AuSn) Tbase = 70 °C θJC = 8.4 °C/W Channel Temperature (Tch), and Median Lifetime (Tm) Tbase = 70 °C, Vc1 = 0 V, Vc2 = -40 V, Pin = 10 W, Pdiss = 2.9 W Tch = 94.5 °C Tm = 1.8 E+10 Hours Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm (Hours) 1.E+15 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET7 1.E+04 25 50 75 100 125 150 175 200 225 250 275 Channel Temperature, Tch (°C) Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. - 3 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2353 DC – 18 GHz High Power SPDT Switch Typical Performance Insertion Loss (On-State) vs. Frequency Isolation (Off-State) vs. Frequency Vc1 = 0 V, Vc2 = -40 V, +25 0C 0.0 -10 -0.5 -20 -1.0 -30 Isolation (dB) Insertion Loss (dB) Vc1 = -40 V, Vc2 = 0 V, +25 0C -1.5 -2.0 -2.5 -3.0 -50 -60 -70 -3.5 -80 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 Frequency (GHz) Frequency (GHz) Return Loss (On-State) vs. Frequency Return Loss (Off-State) vs. Frequency Off-State Output Return Loss (dBm) Vc1 = -40 V, Vc2 = 0 V, +25 0C 0 On-State Return Loss (dB) -40 -5 -10 -15 -20 -25 -30 IRL -35 ORL -40 0 2 4 6 8 10 12 14 16 18 20 22 Vc1 = 0 V, Vc2 = -40 V, +25 0C 0 -1 -2 -3 -4 -5 -6 -7 0 2 4 6 8 10 12 14 16 18 20 22 Frequency (GHz) Frequency (GHz) Loss Compression vs. Pin vs. Frequency Vc1 = -40 V, Vc2 = 0 V, +25 0C Loss Compression (dB) 0.2 0.0 -0.2 8 GHz 10 GHz 12 GHz 14 GHz 16 GHz 18 GHz -0.4 -0.6 -0.8 -1.0 28 30 32 34 36 38 40 Input Power (dBm) Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. - 4 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2353 DC – 18 GHz High Power SPDT Switch Application Circuit Vc2 2, 7 J2 RF Out1 5 J3 RF Out2 1 J1 RF In Vc1 4 3, 6 Vc1 can be biased from either bond pad 3 or 6, and the non-biased bond pad can be left open. Vc2 can be biased from either bond pad 2 or 7, and the non-biased bond pad can be left open. This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused RF Out port with a 50 Ohm load. Bias-up Procedure Bias-down Procedure Vc1 set to -40 V (On State for Insertion Loss) or 0 V (OFF State for Isolation) Vc2 set to 0 V (On State for Insertion Loss) or -40 V (OFF State for Isolation) Apply RF signal to RF Input Turn off RF supply Turn Vc1 to 0V Turn Vc2 to 0 V Function Table RF Path RF In to RF Out1 (50 Ohm load to RF Out2) RF In to RF Out2 (50 Ohm load to RF Out1) Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. State Vc1 Vc2 On-State (Insertion Loss) Off-State (Isolation) On-State (Insertion Loss) Off-State (Isolation) 0V -40 V -40 V 0V -40 V 0V 0V -40 V - 5 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2353 DC – 18 GHz High Power SPDT Switch Bond Pad Description 2 3 4 1 7 6 5 Bond Pad Symbol Description 1 RF In 2, 7 Vc2 3, 6 Vc1 4 5 RF Out1 RF Out2 Input, matched to 50 ohms, DC coupled Control voltage #2; can be biased from either side (bond pad 2 or bond pad 7), and nonbiased bond pad can be left opened; see Application Circuit on page 5 as an example Control voltage #1; can be biased from either side (bond pad 3 or bond pad 6), and nonbiased bond pad can be left opened; see Application Circuit on page 5 as an example Output #1, matched to 50 ohms, DC coupled Output #2, matched to 50 ohms, DC coupled Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. - 6 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2353 DC – 18 GHz High Power SPDT Switch Assembly Drawing Vc1 RF Out1 RF In RF Out2 Vc2 Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. - 7 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2353 DC – 18 GHz High Power SPDT Switch Mechanical Information 0.175 0.300 0.925 0.985 1.652 2 3 1.476 1.476 4 1.275 1.031 1 0.826 0.621 0.377 7 6 0.177 0.177 5 0.0 0.0 0.175 0.300 0.925 1.150 Unit: millimeters Thickness: 0.10 Die x, y size tolerance: +/- 0.050 Chip edge to bond pad dimensions are shown to center of pad Ground is backside of die Bond Pad 1 2, 7 3, 6 4 5 Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. Symbol Pad Size RF In Vc2 Vc1 RF Out1 RF Out2 0.100 x 0.200 0.100 x 0.100 0.100 x 0.100 0.200 x 0.100 0.200 x 0.100 - 8 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2353 DC – 18 GHz High Power SPDT Switch Product Compliance Information ESD Information Solderability This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). ESD Rating: Value: Test: Standard: TBD Passes ≥ TBD V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free ECCN US Department of Commerce EAR99 Assembly Notes Component placement and adhesive attachment assembly notes: • Vacuum pencils and/or vacuum collets are the preferred method of pick up. • Air bridges must be avoided during placement. • The force impact is critical during auto placement. • Organic attachment (i.e. epoxy) can be used in low-power applications. • Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: • Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum. • An alloy station or conveyor furnace with reducing atmosphere should be used. • Do not use any kind of flux. • Coefficient of thermal expansion matching is critical for long-term reliability. • Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: • Thermosonic ball bonding is the preferred interconnect technique. • Force, time, and ultrasonics are critical parameters. • Aluminum wire should not be used. • Devices with small pad sizes should be bonded with 0.0007-inch wire. Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. - 9 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TGS2353 DC – 18 GHz High Power SPDT Switch Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Data Sheet: Rev A 06/20/11 © 2011 TriQuint Semiconductor, Inc. - 10 of 10 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®