TRIQUINT TQP3M9006

TQP3M9006
High Linearity LNA Gain Block
Applications
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Repeaters
Mobile Infrastructure
LTE / WCDMA / CDMA / EDGE
General Purpose Wireless
Product Features
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16-pin 3x3 QFN package
Functional Block Diagram
500-4000 MHz
13.5 dB Gain @ 1.9 GHz
1.0 dB Noise Figure @ 1.9 GHz
+38.5 dBm Output IP3
+22.4 dBm P1dB
50 Ohm Cascadable Gain Block
Unconditionally Stable
High Input Power Capability
+5V Single Supply, 90 mA Current
3x3 mm QFN Package
General Description
Pin Configuration
The TQP3M9006 is a high linearity low noise gain block
amplifier in a low-cost surface-mount package. At 1.9
GHz, the amplifier typically provides 13.5 dB gain, +38.5
dBm OIP3, and 1.2 dB Noise Figure while only drawing
90 mA current.
The device is housed in a
leadfree/green/RoHS-compliant industry-standard 16-pin
3x3mm QFN package.
Pin #
Symbol
2
11
All Other Pins
Backside Paddle
RF Input
RF Output / Vdd
N/C or GND
GND
The TQP3M9006 has the benefit of having high linearity
while also providing very low noise across a broad range
of frequencies. This allows the device to be used in both
receive and transmit chains for high performance
systems. The amplifier is internally matched using a high
performance E-pHEMT process and only requires an
external RF choke and blocking/bypass capacitors for
operation from a single +5V supply. The internal active
bias circuit also enables stable operation over bias and
temperature variations.
The TQP3M9006 covers the 0.5- 4 GHz frequency band
and is targeted for wireless infrastructure or other
applications requiring high linearity and/or low noise
figure.
Ordering Information
Part No.
Description
TQP3M9006
TQP3M9006-PCB
High Linearity LNA Gain Block
0.5-4 GHz Evaluation Board
Standard T/R size = 2500 pieces on a 7” reel.
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
- 1 of 9 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TQP3M9006
High Linearity LNA Gain Block
Specifications
Recommended Operating Conditions
Absolute Maximum Ratings
Parameter
Rating
Parameter
Storage Temperature
-55 to 150 oC
RF Input Power,CW,50 Ω,T=25ºC
+ 20 dBm
Device Voltage,Vdd
+7 V
Vdd
Tcase
Tj (for>106 hours MTTF)
Min
Typ
3.0
-40
5
Max Units
5.25
+85
190
V
o
C
o
C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50 Ω system.
Parameter
Conditions
Operational Frequency Range
Min
Typical
500
Test Frequency
Max
Units
4000
MHz
1900
Gain
12
13.5
MHz
15
dB
Input Return Loss
13
dB
Output Return Loss
19
dB
Output P1dB
Output IP3
See Note 1.
+35
+22.4
dBm
+38.5
dBm
Noise Figure
1.0
dB
Supply Voltage, Vdd
+5
V
68
Current, Idd
90
54.5
Thermal Resistance (jnc to case) θjc
112
mA
o
C/W
Notes:
1. OIP3 is measured with two tones at an output power of 4 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the OIP3 using 2:1 rule. 2:1 rule gives relative value with respect to fundamental tone.
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
- 2 of 9 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TQP3M9006
High Linearity LNA Gain Block
Device Characterization Data
S22
0.8
2.
0
0
2.
4
0.
3.
0
0.
De-embedded S-parameter
Vcc = 5V
4
25
3.
0
0
4.
0
4.
5.0
5.0
0.2
0.2
10.0
15
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
20
0.2
10.0
-10.0
-10.0
-0
.4
2.0
2.5
3.0
3.5
4.0
Frequency (GHz)
-2
-0
.6
Swp Min
0.01GHz
-1.0
1.5
S(1,1)
-0.8
1.0
-0.8
0.5
-1.0
-0
.6
0.0
.
-2
0
.0
.0
.4
-3
-0
5
-3
-4
.0
-5.
0
Gain (dB)
2
-0.
.0
2
-0.
10
-4
.0
-5.
0
Gain (dB)
Swp Max
6GHz
6
0.
1.0
0.8
6
0.
30
Swp Max
6GHz
1.0
S11
De-embedded Gain
S(2,2)
Swp Min
0.01GHz
S-Parameter Data
Vdd = +5 V, Icq = 90 mA, T = +25°C, unmatched 50 ohm system, calibrated to device leads
Freq
(MHz)
50
100
200
400
800
1000
1200
1500
1900
2000
2200
2500
2600
3000
3500
4000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-16.84
-17.401
-17.287
-16.259
-14.058
-13.461
-13.096
-12.757
-12.718
-12.97
-13.043
-13.062
-13.221
-13.475
-14.256
-14.52
-151.32
-164.51
-168.02
-169.15
-173.2
-175.46
-177.29
-177.2
-173.31
-172.34
-169.97
-163.57
-163
-157.55
-162.42
178.56
23.531
23.315
22.903
21.851
19.184
17.931
16.795
15.241
13.397
12.969
12.161
11.043
10.671
9.3978
8.1567
7.1124
168.18
165.29
156.16
138.35
111.93
102.1
93.532
81.983
68.817
65.789
60.064
52.376
49.934
40.398
28.943
16.613
-28.093
-28.064
-27.93
-27.459
-25.857
-24.902
-23.936
-22.616
-21.104
-20.821
-20.183
-19.352
-19.117
-18.141
-17.037
-16.013
6.4819
6.2924
10.039
17.79
30.27
33.496
36.097
37.018
36.304
36.102
34.744
32.905
32.135
28.959
24.266
16.846
-13.835
-14.006
-14.114
-14.288
-15.59
-16.791
-18.092
-19.269
-18.018
-17.678
-16.05
-14.575
-14.005
-12.674
-12.843
-14.488
-175.95
164.09
138.62
101.29
50.117
30.427
9.8602
-24.674
-60.918
-67.922
-77.206
-88.454
-90.198
-99.96
-111.14
-134.94
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
- 3 of 9 -
Disclaimer: Subject to change without notice
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TQP3M9006
High Linearity LNA Gain Block
Application Circuit Configuration
Notes:
1. See PC Board Layout, under Applications Information section, for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. B1 (0 Ω jumper) may be replaced with copper trace in the target application layout.
Bill of Material: TQP3M9006-PCB
Reference Desg.
Value
U1
Description
Manufacturer
Part Number
High Linearity LNA Gain Block
TriQuint
TQP3M9006
C2, C6
100 pF
Cap, Chip, 0603, 50V, NPO, 5%
various
C1
0.1 uF
Cap, Chip, 0603, 16V, X7R, 10%
various
L2
47 nH
Ind, Chip, 0603, 5%
various
C3
4.7 uF
Cap, Chip, 0603, 6.3V, X5R, 20% various
B1
0Ω
Res, Chip, 0603, 1/16W, 5%
L1, D1, C4
Do Not Place
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
various
various
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TQP3M9006
High Linearity LNA Gain Block
Typical Performance TQP3M9006-PCB
Test conditions unless otherwise noted: +25ºC, +5V, 90 mA, 50 Ω system. The data shown below is measured on TQP3M9006-PCB
Frequency
MHz
500
900
1900
2600
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3 [1]
Noise Figure [2]
dB
dB
dB
dBm
dBm
dB
21.2
13
10
+22.3
+36.8
1.0
18.7
13
14
+22.3
+37.3
1.1
13.5
13
19
+22.4
+38.5
1.0
10.7
14
15
+22.6
+38.9
1.5
Notes:
1. OIP3 measured with two tones at an output power of +4 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
2. Noise figure data shown in the table above is measured on evaluation board and corrected for the board loss of around 0.13dB @ 1.9 GHz.
Performance Plots
Performance plots data is measured using TQP3M9006-PCB. Noise figure plot has been corrected for evaluation board loss of
around 0.13dB @ 1.9 GHz.
Gain vs. Frequency
24
Vcc = 5V
Vcc = 5V
22
Input Return Loss (dB)
20
+85°C
+25°C
−40°C
18
Gain (dB)
Input Return Loss vs. Frequency
0
16
14
12
10
-5
+85°C
+25°C
−40°C
-10
-15
-20
8
6
-25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
Frequency (GHz)
Output Return Loss vs. Frequency
0
3.0
3.5
4.0
Vcc = 5 V
+85°C
+25°C
−40°C
3.0
NF (dB)
Output Return Loss (dB)
2.5
3.5
+85°C
+25°C
−40°C
-10
2.0
Noise Figure vs. Frequency
4.0
Vcc = 5V
-5
1.5
Frequency (GHz)
-15
2.5
2.0
1.5
1.0
-20
0.5
-25
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Frequency (GHz)
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
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TQP3M9006
High Linearity LNA Gain Block
Performance Plots
OIP3 vs. Output Power/Tone
50
Freq. = 900 MHz
1MHz Tone Spacing
Vcc = 5V
35
40
35
30
30
0
2
4
6
8
10
12
0
2
Output Power (dBm)
4
6
8
10
12
Output Power/Tone (dBm)
OIP3 vs. Output Power/Tone
50
P1dB vs. Temperature
24
Vcc = 5V
1 MHz Tone Spacing
Temp. = 25oC
Vcc = 5V
45
1900 MHz
900 MHz
23
2600 MHz
500 MHz
P1dB (dBm)
OIP3 (dBm)
+85°C
+25°C
−30 C
−40°C
45
OIP3 (dBm)
40
Vcc = 5V
Freq. = 1900 MHz
1 MHz Tone Spacing
+85°C
+25°C
−30 C
−40°C
45
OIP3 (dBm)
OIP3 vs. Output Power/Tone
50
40
22
21
35
20
30
0
1
2
3
4
5
6
7
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
-40
-20
0
20
40
60
80
Temperature (°C)
Output Power/Tone (dBm)
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TQP3M9006
High Linearity LNA Gain Block
Pin Description
Pin
Symbol
Description
2
RF Input
Input, matched to 50 ohms. External DC Block is required.
11
Vdd / RFout
All other pins
GND
Output, matched to 50 ohms, External DC Block is required and supply voltage.
These pins are not connected internally but are recommended to be grounded on the PCB
for optimal isolation.
Backside Paddle. Multiple vias should be employed to minimize inductance and thermal
resistance; see page 7 for mounting configuration.
GND Paddle
Applications Information
PC Board Layout
Top RF layer is .014” NELCO N4000-13, єr = 3.9, 4 total layers (0.062”
thick) for mechanical rigidity. Metal layers are 1-oz copper. 50 ohm
Microstrip line details: width = .029”, spacing = .035”
The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been
developed to accommodate lead and package tolerances. Since surface
mount processes vary from company to company, careful process
development is recommended.
For further technical information, Refer to www.TriQuint.com
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
- 7 of 9 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TQP3M9006
High Linearity LNA Gain Block
Mechanical Information
Package Information and Dimensions
This package is lead-free/RoHS-compliant.
The plating material on the leads is annealed
matte tin. It is compatible with both leadfree (maximum 260 °C reflow temperature)
and lead (maximum 245 °C reflow
temperature) soldering processes.
The component will be marked with a
“9006” designator with an alphanumeric lot
code on the top surface of package.
TriQuint
9006
YYWW
aXXXX
Mounting Configuration
All dimensions are in millimeters (inches). Angles are in degrees.
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
- 8 of 9 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TQP3M9006
High Linearity LNA Gain Block
Product Compliance Information
ESD Information
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passes  250 V to < 500 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes  1000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
MSL Rating
MSL 1 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 1 at 260°C per JEDEC
standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.503.615.9000
+1.503.615.8902
For technical questions and application information:
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information. TriQuint products are not
warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other
applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev C 05/26/11
© 2011 TriQuint Semiconductor, Inc.
- 9 of 9 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®