TYSEMI 1N5819

Product specification
1N5817-1N5819
DO-214AC(SMA)
Unit: mm
3.93
3.73
4.597
3.988
1.575
1.397
Features
1
2
For Surface Mounted Applications
Metal Silicon Junction, Majority Carrier Conduction
2.896
2.489
1.67
1.47
2.38
2.18
5.49
5.29
5.283
4.775
Low Power Loss, High Efficiency
High Forward Surge Current Capability
2.438
1.981
0.203
0.051
1.524
0.762
Recommended
Land Pattern
0.305
0.152
Maximum Ratings and Electrical Characteristics @ Ta = 25
Parameter
Rating
Symbol
Unit
1N5817
1N5818
1N5819
Maximum Repetitive Peak Reverse Voltage
VRRM
20
30
40
Maximum RMS voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
I(AV)
1.0
A
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
40
A
Maximum InstantaneousForward Voltage at 1.0A
VF
Maximum DC Reverse Current TA=25
At Rated DC Blocking Voltage
IR
TA=100
Typical Junction Capacitance *1
Typical Thermal Resistance
CJ
*2
R
Operating Runction Temperature Range
Storage Temperature Range
JA
0.45
0.55
0.55
0.5
V
V
mA
6.0
110
pF
88.0
/W
TJ
-65 to +125
TSTG
-65 to +150
*1 Measured at 1Mz and applied reverse voltage of 4.0V D.C.
*2 P.C.B mounted with 0.2X0.2"(5.0x5.0mm)copper pad areas
Marking
Part NO.
1N5817
1N5818
1N5819
Marking
SS12
SS13
SS14
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sales@twtysemi.com
4008-318-123
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Product specification
1N5817-1N5819
Electrical Characteristics Curves
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 3
Product specification
1N5817-1N5819
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
3 of 3