Product specification 1N5817-1N5819 DO-214AC(SMA) Unit: mm 3.93 3.73 4.597 3.988 1.575 1.397 Features 1 2 For Surface Mounted Applications Metal Silicon Junction, Majority Carrier Conduction 2.896 2.489 1.67 1.47 2.38 2.18 5.49 5.29 5.283 4.775 Low Power Loss, High Efficiency High Forward Surge Current Capability 2.438 1.981 0.203 0.051 1.524 0.762 Recommended Land Pattern 0.305 0.152 Maximum Ratings and Electrical Characteristics @ Ta = 25 Parameter Rating Symbol Unit 1N5817 1N5818 1N5819 Maximum Repetitive Peak Reverse Voltage VRRM 20 30 40 Maximum RMS voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current I(AV) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 40 A Maximum InstantaneousForward Voltage at 1.0A VF Maximum DC Reverse Current TA=25 At Rated DC Blocking Voltage IR TA=100 Typical Junction Capacitance *1 Typical Thermal Resistance CJ *2 R Operating Runction Temperature Range Storage Temperature Range JA 0.45 0.55 0.55 0.5 V V mA 6.0 110 pF 88.0 /W TJ -65 to +125 TSTG -65 to +150 *1 Measured at 1Mz and applied reverse voltage of 4.0V D.C. *2 P.C.B mounted with 0.2X0.2"(5.0x5.0mm)copper pad areas Marking Part NO. 1N5817 1N5818 1N5819 Marking SS12 SS13 SS14 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification 1N5817-1N5819 Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Product specification 1N5817-1N5819 http://www.twtysemi.com [email protected] 4008-318-123 3 of 3