Product specification 2SC3518-Z TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 High DC current gain. +0.15 0.50 -0.15 +0.2 9.70 -0.2 Fast switching speed. 3 .8 0 Low VCE(sat). 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current IC 5 A Collector current (pulse) *1 ICP 7 A Total power dissipation *2 PT 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 PW 10 ms, duty cycle 50% *2 When mounted on ceramic substrate of 7.5cm2X0.7mm Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain * hFE Testconditons Min Typ VCB = 50V, IE=0 VEB = 7V, IC=0 VCE = 1V , IC = 2A 100 VCE = 1V , IC = 5A 50 Max Unit 10 ìA 10 ìA 400 V Collector-emitter saturation voltage * VCE(sat) IC = 2A , IB = 0.2A 0.3 V Base-emitter saturation voltage * VBE(sat) IC = 2A , IB = 0.2A 1.2 V Gain bandwidth product fT VCE = 10V , IE = 500mA 120 MHz Turn-on time ton VCC = 10V, RL=5Ù 0.07 1 ìs Storage time tstg IC = 2A , 0.8 2.5 ìs Turn-off time toff IB1 = -IB2 = 0.2A 0.12 1 ìs *. PW 350ìs,duty cycle 2% hFE Classification Marking M L hFE 100 200 150 300 http://www.twtysemi.com K 200 400 [email protected] 4008-318-123 1 of 1