TYSEMI 2SC3632-Z

Product specification
2SC3632-Z
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.15
1.50 -0.15
TO-252
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
0.5ìs
+0.1
0.80-0.1
+0.28
1.50 -0.1
High speed tf
+0.2
9.70 -0.2
High voltage VCEO=600V
+0.15
0.50 -0.15
Features
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
600
V
Collector to emitter voltage
VCES
600
V
Emitter to base voltage
VEBO
7
V
Peak collector current *1
ICP
2
A
Collector current
IC
1
A
PT
2
W
Total power dissipation
Ta= 25 *2
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 pw 10ms,Duty cycle 50%
*2 when mounted on ceramic substrate of 7.5cm2X0.7mm
Electrical Characteristics Ta = 25
Max
Unit
collecotr cutoff current
Parameter
Symbol
ICBO
VCB=600V,IE=0
Testconditons
Min
Typ
10
ìA
Emitter cutoff current
IEBO
VEB=7V,IC=0
10
ìA
DC Current Gain
hFE
VCE=5V,IC=100mA
30
55
VCE=5V,IC=100mA
5
7
120
Collector saturation voltage
VCE(sat)
IC=400mA,IB=80mA
0.35
1.0
V
Base to saturation voltage
VBE(sat)
IC=400mA,IB=80mA
0.9
1.2
V
VCE=5V,IE=-50mA
30
MHz
cob
VCB=10V,IE=0A,f=1MHz
14
pF
Turn-on time
ton
IC=0.5A,RL=500Ù
0.1
0.5
ìs
Storage time
tstg
IB1=-IB2=0.1A
4.0
5.0
ìs
VCC=250V
0.2
0.5
ìs
Gain Bandwidth Product
fT
Output capacitance
Fall time
tf
hFE Classification
Marking
M
L
K
hFE
30 to 60
40 to 80
60 to 120
http://www.twtysemi.com
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4008-318-123
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