Transistors IC SMD Type Product specification 2SD2167 Features Built-in zener diode between collector and base. Zener diode has low voltage dispersion. Strong protection against reverse power surges due to low loads. PC=2 W (on 40 40 0.7mm ceramic board) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 31 4 V Collector-emitter voltage VCEO 31 4 V Emitter-base voltage VEBO 5 V Collector current 2 IC Collector power dissipation PC A DC) 3 A(Pulse)*1 0.5 W 2 W *2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 Pw=20ms , duty=1/2 *2 When mounted on a 40 x 40 x 0.7 mm ceramic board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification 2SD2167 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 27 V Collector-emitter breakdown voltage BVCEO IC=1mA 27 V Emitter-base breakdown voltage 5 BVEBO IE=50ìA Collector cutoff current ICBO VCB=20V 1 ìA Emitter cutoff current IEBO VEB=5V 1 ìA 1 V 0.5 V Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A IC=1A, IB=50mA DC current transfer ratio hFE Output capacitance fT Transition frequency Cob V VCE=3V, IC=0.5A 0.25 56 270 VCE=3V, IE= -0.5A, f=30MHz 100 MHz VCB=10V, IE=0A, f=1MHz 25 pF hFE Classification DL Marking Rank N P Q hFE 56 120 82 180 120 270 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2