Transistors IC SMD Type Product specification 2SD602 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and 0.55 Low collector to emitter saturation voltage VCE(sat). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 automatic insertion through the tape packing and the magazine +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 packing. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Peak collector current ICP 1 A Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10 ìA, IE = 0 30 V Collector-emitter voltage VCEO IC = 10 mA, IB = 0 25 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 V Collector-base cutoff current ICBO VCB = 20 V, IE = 0 Forward current transfer ratio hFE VCE = 10 V, IC = 150 mA Collector-emitter saturation voltage 0.1 85 VCE(sat) IC = 300 mA, IB = 30 mA Transition frequency fT Collector output capacitance Cob VCB = 10 V, IE = -50 mA , f = 200 MHz VCB = 10V , IE = 0 , f = 1.0MHz 160 340 0.35 0.6 200 6 ìA V MHz 15 pF hFE Classification Marking WQ WR WS hFE 85 170 120 240 170 340 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1