TYSEMI 2SD874A

Transistors
IC
SMD Type
Product specification
2SD874,2SD874A
Features
Large collector power dissipation PC.
Low collector-emitter saturation voltage VCE(sat).
Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Symbol
2SD874
VCBO
Unit
30
V
2SD874A
60
V
2SD874
25
V
50
V
VCEO
2SD874A
Emitter-base voltage
Rating
VEBO
5
V
Collector current
IC
1
A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
2SD874,2SD874A
Electrical Characteristics Ta = 25
Parameter
Symbol
2SD874
Collector-base voltage
Testconditons
Min
IC = 10 ìA, IE = 0
VCBO
2SD874A
2SD874
Collector-emitter voltage
VCEO
IC = 2 mA, IB = 0
2SD874A
Emitter-base voltage
VEBO
IE = 10ìA, IC = 0
Collector-base cutoff current
ICBO
VCB = 20 V, IB = 0
Forward current transfer ratio
hFE
VCE = 10 V, IC = 500 mA
Typ
Max
30
V
60
V
25
V
50
V
5
V
85
0.1
ìA
340
?
V
Collector-emitter saturation voltage
VCE(sat) IC = 500 mA, IB = 50 mA
0.2
0.4
Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
0.85
1.2
Transition frequency
VCB = 10 V, IE = -50 mA, f = 200 MHz
fT
Collector output capacitance
Cob
Unit
200
VCB = 10 V, IE = 0, f = 1 MHz
V
MHz
20
pF
hFE Classification
2SD874:Z, 2SD874A:Y
Marking
Rank
Q
R
S
hFE
85 170
120 240
170 340
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2