TYSEMI 2SK3638

IC
MOSFET
SMD Type
Product specification
2SK3638
TO-252
Low Ciss: Ciss = 1100 pF TYP.
+0.1
0.80-0.1
Built-in gate protection diode
2.3
+0.1
0.60-0.1
0.127
max
3.80
MAX. (VGS = 4.5 V, ID = 18 A)
+0.8
0.50-0.7
+0.15
5.55-0.15
RDS(on)2 = 15 m
Unit: mm
+0.1
2.30-0.1
+0.25
2.65-0.1
MAX. (VGS = 10 V, ID = 32 A)
+0.2
9.70-0.2
RDS(on)1 = 8.5 m
+0.15
0.50-0.15
Low on-state resistance
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.28
1.50-0.1
Features
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
20
V
Gate to source voltage
VGSS
Drain current
Power dissipation
TC=25
20
V
ID
64
A
Idp *
220
A
36
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
1.0
TA=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
VDS=20V,VGS=0
Gate leakage current
IGSS
VGS= 20V,VDS=0
VGS(off)
VDS=10V,ID=1mA
1.5
12
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Typ
Max
Unit
10
A
10
A
2.5
V
Yfs
VDS=10V,ID=32A
RDS(on)1
VGS=10V,ID=32A
6.8
8.5
m
RDS(on)2
VGS=4.5V,ID=18A
10
15
m
Ciss
VDS=10V,VGS=0,f=1MHZ
25
S
1100
pF
Output capacitance
Coss
450
pF
Reverse transfer capacitance
Crss
170
pF
Turn-on delay time
ton
10
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
http://www.twtysemi.com
ID=32A,VGS(on)=10V,RG=0 ,VDD=10V
VDD = 16V
VGS = 10 V
ID =64A
[email protected]
4.3
ns
35
ns
9.7
ns
22
nC
4.3
nC
5.1
nC
4008-318-123
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