Product specification BAV23A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Switching speed: max. 50 ns 0.4 3 Small plastic SMD package 1 Continuous reverse voltage: max. 200 V 0.55 General application 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Repetitive peak reverse voltage: max. 250 V Repetitive peak forward current: max. 625 mA. +0.05 0.1-0.01 0-0.1 1 +0.1 0.38-0.1 +0.1 0.97-0.1 3 1.Base 2.Emitter 3.collector 2 Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Repetitive peak reverse voltage series connection Continuous reverse voltage Continuous reverse voltage series connection Continuous forward current (single diode loaded *) Symbol Rating Unit VRRM 250 V VRRM 500 V VR 200 V VR 400 V IF (double diode loaded *) Repetitive peak forward current ) t=1us t = 100us ) * 625 mA 9 IFSM 3 PD 350 mW t =10ms power dissipation (Tamb = 25 mA 125 IFRM Non-repetitive peak forward current (Tj = 25 225 A 1.7 thermal resistance from junction to tie-point Rth j-tp 360 K/W thermal resistance from junction to ambient * Rth j-a 500 K/W Storage temperature Tst g -65 to +150 Junction temperature Tj 150 * Device mounted on an FR4 printed-circuit board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification BAV23A Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage VF Forward voltage VF Reverse current IR Reverse current IR Diode capacitance Cd Reverse recovery time Conditions Max 1.0 V IF = 200 mA 1.25 V series connection, IF = 100 mA 2.0 V series connection, IF = 200 mA VR = 200 V 2.5 V 100 nA VR = 200V; Tj = 150 VR = 400 V 100 mA 100 nA VR = 400V; Tj = 150 100 mA f = 1 MHz; VR = 0 V; 5 pF 50 ns when switched from IF =30 mA to IR = 30 mA; trr Unit IF = 100 mA RL = 100 ; measured at IR = 3 mA; Typical Characteristics 600 300 handbook, halfpage IF (mA) IF (mA) (1) (3) single diode loaded double diode loaded 200 100 0 0 0 100 o T amb ( C) 200 Device mounted on an FR4 printed-circuit board. Fig.1 (2) 400 200 Maximum permissible continuous forward current as a function of ambient temperature. http://www.twtysemi.com [email protected] 0 1 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 VF (V) 2 Forward current as a function of forward voltage. 4008-318-123 2 of 3 Product specification BAV23A 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 102 10 103 104 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2 10halfpage handbook, 1.0 handbook, halfpage Cd (pF) IR (µA) 0.8 10 (1) 1 10 (2) 0.6 1 0.4 10 2 0 100 Tj (oC) 0.2 0 200 2 4 6 (1) VR = 200 V; maximum values. (2) VR = 200 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.4 Fig.5 Reverse current as a function of junction temperature. http://www.twtysemi.com [email protected] VR (V) 8 Diode capacitance as a function of reverse voltage; typical values. 4008-318-123 3 of 3