SMD Type Product specification FDN359BN Features • 2.7 A, 30 V. General Description This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON)= 0.046 Ω @ VGS = 10 V RDS(ON)= 0.060 Ω @ VGS = 4.5 V • Very fast switching speed. • Low gate charge (5nC typical) These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS ID Gate-Source Voltage ±20 V A Maximum Drain Current – Continuous (Note 1a) – Pulsed 15 Maximum Power Dissipation PD TJ, TSTG 2.7 (Note 1a) 0.5 (Note 1b) 0.46 W −55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 359B FDN359BN 7’’ 8mm 3000 units http://www.twtysemi.com 4008-318-123 1 of 3 SMD Type Product specification FDN359BN Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA 30 ID = 250 µA,Referenced to 25°C VDS = 24 V, V 21 VGS = 0 V O TJ = -55 C IGSS On Characteristics VGS(th) VGS = ±20 V, Gate–Body Leakage VDS = 0 V mV/°C 1 µA 10 µA ±100 nA 3 V (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA,Referenced to 25°C ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, ID = 2.7 A VGS = 4.5 V, ID = 2.4 A VGS = 10 V, ID = 2.7 A, TJ = 125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5V, ID = 2.7 A 11 VDS = 15 V, f = 1.0 MHz V GS = 0 V, 485 650 pF 105 140 pF 65 100 pF 1 1.8 –4 0.026 0.032 0.033 mV/°C 0.046 0.060 0.075 15 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge f = 1.0 MHz Ω 1.8 (Note 2) 7 14 ns 5 10 ns Turn–Off Delay Time 20 35 ns Turn–Off Fall Time 2 4 ns 5 7 http://www.twtysemi.com VDD = 15V, VGS = 10 V, VDS = 15 V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 2.7 A, nC 1.3 nC 1.8 nC 4008-318-123 2 of 3 SMD Type Product specification FDN359BN Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units 0.42 A 0.7 1.2 V 12 20 ns 3 5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 0.42 A (Note 2) IF = 2.7A, diF/dt = 100 A/µs otes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com 4008-318-123 3 of 3