SMD Type Product specification FDN371N General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS(ON) = 50 mΩ @ VGS = 4.5 V RDS(ON) = 60 mΩ @ VGS = 2.5 V Applications • Low gate charge (7.6 nC typical) • Load switch • Battery protection • Fast switching speed • Power management • High performance trench technology for extremely low RDS(ON) D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current (Note 1a) 2.5 A PD Power Dissipation for Single Operation (Note 1a) 0.5 (Note 1b) 0.46 – Continuous – Pulsed TJ, TSTG 10 W –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 371 FDN371N 7’’ 8mm 3000 units http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification FDN371N Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA VDS = VGS, ID = 250 µA 1.5 V On Characteristics 20 ID = 250 µA,Referenced to 25°C V 13 mV/°C µA (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance 0.5 ID(on) On–State Drain Current VGS = 4.5 V, ID = 2.5 A VGS = 2.5 V, ID = 2.3 A VGS = 4.5V, ID = 2.5 A, TJ = 125°C VGS = 4.5V, VDS = 5 V gFS Forward Transconductance VDS = 5V, ID = 2.5 A 16 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 815 pF ID = 250 µA,Referenced to 25°C 1.0 –3 22 29 31 mV/°C 50 60 75 5 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) 197 pF 106 pF (Note 2) 7 14 ns 9 18 ns Turn–Off Delay Time 17 31 ns tf Turn–Off Fall Time 5.5 11 ns Qg Total Gate Charge 7.6 10.7 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 2.5 A, 1.5 nC 2 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.6 0.42 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com [email protected] 4008-318-123 2 of 2