SMD Type Product specification FDN5630 General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space. • 1.7 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V RDS(ON) = 0.120 Ω @ VGS = 6 V. • Optimized for use in high frequency DC/DC converters. • Low gate charge. • Very fast switching. • SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint. Applications • • DC/DC converter Motor drives D D S TM SuperSOT -3 G G Absolute Maximum Ratings Symbol S TA = 25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current 1.7 A - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation 10 (Note 1a) (Note 1b) TJ, Tstg Operating and Storage Junction Temperature Range 0.5 W 0.46 -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 5630 FDN5630 7 8mm 3000 units http://www.twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification FDN5630 Electrical Characteristics Symbol TA = 25 C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 20 V, VDS = 0 V 100 nA VGS = -20 V, VDS = 0 V -100 nA 3 V IGSSR On Characteristics 60 V 63 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(ON) Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = 10 V, ID = 1.7 A VGS = 10 V, ID = 1.7 A, TJ = 125°C VGS = 6 V, ID = 1.6 A VGS = 10 V, VDS = 1.7 V gFS Forward Transconductance VDS = 10 V, ID = 1.7 A 6 VDS = 15 V, VGS = 0 V, f = 1.0 MHz 400 pF 102 pF 21 pF 1 2.4 6.9 0.073 0.127 0.083 mV/°C 0.100 0.180 0.120 5 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VDS = 20 V, ID = 1.7 A, VGS = 10 V, 10 20 6 15 ns ns 15 28 ns 5 15 ns 7 10 nC 1.6 nC 1.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.42 A 1.2 V 0.72 Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com 4008-318-123 2 of 2