Product specification FDS9926A FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V). • 6.5 A, 20 V. • Optimized for use in battery protection circuits Applications • ±10 VGSS allows for wide operating voltage range • Battery protection • Low gate charge RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.043 Ω @ VGS = 2.5 V. • Load switch • Power management D1 D1 5 D2 6 D2 4 3 Q1 7 SO-8 S2 G2 S1 G1 Absolute Maximum Ratings Symbol 8 2 Q2 1 o TA=25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V ID Drain Current 6.5 A PD Power Dissipation for Dual Operation – Continuous (Note 1a) – Pulsed 20 2 Power Dissipation for Single Operation TJ, TSTG (Note 1a) W 1.6 (Note 1b) 1 (Note 1c) 0.9 -55 to +150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9926A FDS9926A 13’’ 12mm 2500 units http://www.twtysemi.com [email protected] 4008-318-123 1 of 1 Product specification Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA 1.5 V On Characteristics 20 FDS9926A Electrical Characteristics V 14 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5.4 A VGS= 4.5 V, ID =6.5A, TJ=125°C VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 3 A 11 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 700 pF 0.5 1 -3 0.025 0.036 0.035 mV/°C 0.030 0.043 0.050 15 Ω A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf 175 pF 85 pF (Note 2) 8 16 ns 10 18 ns Turn–Off Delay Time 18 29 ns Turn–Off Fall Time 5 10 ns Qg Total Gate Charge 7 10 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω VDS = 10 V, VGS = 4.5 V ID = 3A, 1.2 nC 1.9 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.65 1.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°/W when 2 mounted on a 0.5in pad of 2 oz copper b) 125°/W when mounted on a 0.02 2 in pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% http://www.twtysemi.com [email protected] 4008-318-123 1 of 1