SMD Type Product specification FDV303N Digital FET, N-Channel General Description Features 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6 Ω @ VGS= 2.7 V. These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T. SOT-23 SuperSOTTM-8 SuperSOTTM-6 SO-8 SOIC-16 SOT-223 Mark:303 D S G Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID Drain/Output Current TA = 25oC unless other wise noted FDV303N Units Drain-Source Voltage, Power Supply Voltage 25 V Gate-Source Voltage, VIN 8 V 0.68 A - Continuous - Pulsed 2 PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 0.35 W -55 to 150 °C 6.0 kV 357 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient http://www.twtysemi.com [email protected] 4008-318-123 1of 2 SMD Type Product specification FDV303N Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS Zero Gate Voltage Drain Current 25 o V VDS = 20 V, VGS = 0 V TJ = 55°C IGSS Gate - Body Leakage Current ON CHARACTERISTICS mV / oC 26 ID = 250 µA, Referenced to 25 C VGS = 8 V, VDS= 0 V 1 µA 10 µA 100 nA (Note) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.5 A 0.65 TJ =125°C VGS = 2.7 V, ID = 0.2 A ID(ON) On-State Drain Current VGS = 2.7 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID= 0.5 A mV / oC -2.6 0.8 1.5 V 0.33 0.45 Ω 0.52 0.8 0.44 0.6 0.5 A 1.45 S 50 pF 28 pF 9 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 10 V, VGS = 0 V, f = 1.0 MHz (Note) VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω 3 6 ns 8.5 18 ns Turn - Off Delay Time 17 30 ns Turn - Off Fall Time 13 25 ns 1.64 2.3 nC VDS = 5 V, ID = 0.5 A, VGS = 4.5 V 0.38 nC 0.45 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A (Note) 0.83 0.3 A 1.2 V Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2