Transistors IC Transistor SMD Type Product specification FMMT493 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Medium power transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Peak collector current ICM 2 A Collector current IC 1 A Base current IB 200 mA Ptot 500 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC Transistor SMD Type Product specification FMMT493 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 120 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 100 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 V VCB=100V 100 nA VEB=4V 100 nA VCB=100V 100 nA Collector-emitter saturation voltage * IC=500mA,IB=50mA VCE(sat) IC=1A,IB=100mA 0.3 0.6 V Base-emitter saturation voltage * VBE(sat) IC=1A,IB=100mA 1.15 V Base-emitter voltage * VBE(ON) IC=1A,VCE=10V 1.0 V Collector cutoff current ICBO Emitter cut-off current IEBO Collector cutoff current ICES Static Forward Current Transfer Ratio Transition Frequency fT Collector-Base Breakdown Voltage * Pulse test: tp hFE 300 ìs; d Cobo IC=1mA, VCE=10V* 100 IC=250mA, VCE=10V* 100 IC=500mA, VCE=10V* 60 IC=1A, VCE=10V* 20 IC=50mA,VCE=10V,f=100MHz 150 300 MHz 10 VCB=10V,f=1MHz pF 0.02. Marking Marking 493 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2