Transistors IC Transistor SMD Type Product specification FMMT551 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 60 Volt VCEO. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 1 Amp continuous current. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V Peak collector current ICM -2 A Collector current IC -1 A Base current IB -200 mA Ptot 500 mW Tj,Tstg -55 to +200 Power dissipation Operating and storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -80 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector cutoff current ICBO VCB=-60V 0.1 ìA Emitter cut-off current IEBO VEB=-4V 0.1 ìA -0.35 V -1.1 V Collector-emitter saturation voltage * VCE(sat) IC=-150mA,IB=-15mA Base-emitter saturation voltage * VBE(sat) IC=-150mA,IB=-15mA Static Forward CurrentTransfer Ratio * Current-gain-bandwidth product Output capacitance * Pulse test: tp hFE fT Cobo 300 ìs; d IC=-150mA,VCE=-10V 50 IC=-1A, VCE=-10V 10 IC=-50mA,VCE=-10V,f=100MHz 150 VCB=-10V,f=1MHz 150 MHz 25 pF 0.02. Marking Marking 551 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1